MMBTSD1782Q

MMBTSD1782 NPN Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code: MMBTSD1782Q : ANQ MMBTSD1782R : ANR 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Maximum Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 MMBTSD1782 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit HFE 120 -- 270 -- 180 -- 390 ICBO -- -- 500 nA IEBO -- -- 500 nA V(BR)CBO 80 -- -- V V(BR)CEO 80 -- -- V V(BR)EBO 5 -- -- V VCE(sat) -- -- 0.5 V VBE(sat) -- -- 1.2 V FT -- 120 -- MHz Cob -- 7.5 -- pF DC Current Gain at VCE = 3 V, IC = 100 mA Gain Group Q R Collector Base Cutoff Current at VCB = 50V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 50 μA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 50 μA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 10 V, IC = 50 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revision：2.0 Mar-2021 2/6 MMBTSD1782 NPN Transistor Typical Characteristic Curves 250 500 Common Emitter Ta=25℃ Ta=100℃ 1mA 0.9mA hFE 0.8mA 150 0.7mA 0.6mA 100 Ta=25℃ 100 DC Current Gain Collector Current IC (mA) 200 VCE=3V 0.5mA 0.4mA 0.3mA 50 0.2mA 0 IB= 0.1mA 0 Collector-Emitter Voltage 10 5 4 3 2 1 VCE (V) IC (mA) 800 VCE(sat) (mV) 1000 Ta=25℃ 600 Ta=100℃ 400 200 β=10 1 Collector Current www.pingjingsemi.com Revision：2.0 Mar-2021 100 10 IC (mA) 500 Collector Emitter Saturation Voltage VBE(sat) (mV) Base Emitter Saturation Voltage 500 100 10 Collector Current 1000 0 1 100 Ta=100℃ Ta=25℃ 10 β=10 1 10 Collector Current 100 500 IC (mA) 3/6 MMBTSD1782 NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBTSD1782 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 MMBTSD1782 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 MMBTSD1782 NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6