MMBTSC1815Y

MMBTSC1815 NPN Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : MMBTSC1815O : 8O MMBTSC1815Y : 8Y MMBTSC1815G : 8G MMBTSC1815L : 8L 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Maximum Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 MMBTSC1815 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 70 140 120 240 G 200 400 L 350 700 ICBO -- 100 nA ICEO -- 100 nA IEBO -- 100 nA V(BR)CBO 60 -- V V(BR)CEO 50 -- V V(BR)EBO 5 -- V VCE(sat) -- 0.25 V VBE(sat) -- 1 V FT 80 -- MHz Cob -- 3.5 pF DC Current Gain at VCE = 6 V, IC = 2 mA Gain Group O Y Collector Base Cutoff Current at VCB = 60V Collector Base Cutoff Current at VCE = 50V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 0.1 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Transition Frequency at VCE = 10 V, IC = 1 mA, f = 30 MHz Output Capacitance at VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revision：2.0 Mar-2021 HFE -- 2/6 MMBTSC1815 NPN Transistor Typical Characteristic Curves 0.012 60uA Common Emitter VCE=6V 54uA Ta=100℃ 48uA 0.008 hFE 42uA 36uA 0.006 DC Current Gain Collector Current IC (A) 0.010 1000 Common Emitter Ta=25℃ 30uA 24uA 0.004 18uA 12uA 0.002 Ta=25℃ 100 IB=6uA 0.000 0 2 4 6 10 8 Collector-Emitter Voltage VCE (V) VBEsat (V) VCEsat (V) 0.1 Ta=100℃ Ta=25℃ 1 10 Collector Current 100 1 Ta=25℃ Ta=100℃ 0.1 0.1 100 150 150 IC (mA) =10 Base Emitter Saturation Voltage 0.3 0.01 0.1 10 2 =10 0.03 1 Collector Current 1 Collector Emitter Saturation Voltage 10 0.2 12 1 IC (mA) 10 Collector Current 100 150 IC (mA) 250 1000 Common Emitter VCE=10V Ta=25℃ (mW) PD Power Dissipation Transition Frequency FT (MHz) 200 100 10 0.4 1 3 Collector Current www.pingjingsemi.com Revision：2.0 Mar-2021 10 IC (mA) 30 100 150 100 50 0 0 25 50 75 Ambient Temperature 100 Ta 125 150 (℃) 3/6 MMBTSC1815 NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBTSC1815 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 MMBTSC1815 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 MMBTSC1815 NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6