MMBTSA1037
PNP Transistor
Features
SOT-23
For Switching and AF Amplifier Applications.
Equivalent Circuit
1.Base 2.Emitter 3.Collector
3.Collector
Marking Code :
MMBTSA1037Q : FQ
MMBTSA1037R : FR
MMBTSA1037S : FS
1.Base
2.. Emitter
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
60
V
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
-VEBO
6
V
Collector Current
-IC
150
mA
Maximum Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
℃
TSTG
-55 to +150
℃
Storage Temperature Range
www.pingjingsemi.com
Revision:2.0 Mar-2021
1/6
MMBTSA1037
PNP Transistor
Electrical Characteristics (TA=25℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
120
--
270
180
--
390
270
--
560
-ICBO
--
--
100
nA
-IEBO
--
--
100
nA
-V(BR)CBO
60
--
--
V
-V(BR)CEO
50
--
--
V
-V(BR)EBO
6
--
--
V
-VCE(sat)
--
--
0.5
V
-VBE(sat)
--
--
1
V
FT
--
140
--
MHz
Cob
--
4
5
pF
DC Current Gain
at VCE = -6 V, IC = -1 mA
Gain Group
Q
R
HFE
S
Collector Base Cutoff Current
at VCB = -60 V
Emitter Base Cutoff Current
at VEB = -6 V
Collector Base Breakdown Voltage
at IC = -50 μA
Collector Emitter Breakdown Voltage
at IC = -1 mA
Emitter Base Breakdown Voltage
at IE = -50 μA
Collector Emitter Saturation Voltage
at IC = -50 mA, IB = -5 mA
Base Emitter Saturation Voltage
at IC = -50 mA, IB = -5 mA
Transition Frequency
at VCE = -12 V, IC = -2 mA, f = 30 MHz
Output Capacitance
at VCB = -12 V, f = 1 MHz
www.pingjingsemi.com
Revision:2.0 Mar-2021
--
2/6
MMBTSA1037
PNP Transistor
Typical Characteristic Curves
-12
1000
Common Emitter
Ta=25℃
-50uA
-45uA
Ta=100℃
-8
hFE
-40uA
-35uA
DC Current Gain
Collector Current
IC (mA)
-10
-30uA
-6
-25uA
-20uA
-4
Ta=25℃
100
-15uA
-2
-0
-10uA
IB=-5uA
-0
-2
-4
-6
Collector-Emitter Voltage
10
-8
Common Emitter
VCE=-6V
-1
-10
-100
Collector Current
VCE (V)
-200
IC (mA)
VCEsat (mV)
-800
Ta=25℃
-600
Ta=100℃
-400
-200
-0.1
β=10
-1
Collector Current
-10
IC (mA)
Ta=100℃
-100
Ta=25℃
-50
-0
β=10
-1
-100
-10
Collector Current
IC (mA)
FT (MHz)
Cob/Cib (pF)
Transition Frequency
Output/Input Capacitance
Revision:2.0 Mar-2021
-100
-150
f=1MHz
IE/IC=0
Ta=25℃
Collector-Base Voltage
www.pingjingsemi.com
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VBEsat (mV)
-1000
VCB/VEB (V)
VCE=-12V
Ta=25℃
Collector Current
IC (mA)
3/6
MMBTSA1037
PNP Transistor
Package Outline
SOT-23
Dimensions in mm
Ordering Information
Device
Package
Shipping
MMBTSA1037
SOT-23
3,000PCS/Reel&7inches
www.pingjingsemi.com
Revision:2.0 Mar-2021
4/6
MMBTSA1037
PNP Transistor
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
www.pingjingsemi.com
Revision:2.0 Mar-2021
5/6
MMBTSA1037
PNP Transistor
Package Specifications
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23
Carrier Tape
30,000 pcs per box
10 reels per box
120,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T2
T1
Symbol
A
B
C
E
F
D
T1
T2
B
C
E
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
F
Reel (7'')
www.pingjingsemi.com
Revision:2.0 Mar-2021
6/6
很抱歉,暂时无法提供与“MMBTSA1037Q”相匹配的价格&库存,您可以联系我们找货
免费人工找货