MMBT8050-1.5A
NPN Transistor
SOT-23
Features
For Switching and AF Amplifier Applications.
Equivalent Circuit
1.Base 2.Emitter 3.Collector
3.Collector
Marking Code :
MMBT8050C-1.5A : X1
MMBT8050D-1.5A : Y1
1.Base
2.. Emitter
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
25
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Maximum Power Dissipation
PD
625
mW
Junction Temperature
TJ
150
℃
TSTG
-55 to +150
℃
Storage Temperature Range
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Revision:3.0 Jun-2022
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MMBT8050-1.5A
NPN Transistor
Electrical Characteristics (TA=25℃)
Parameter
Symbol
Min.
Max.
Unit
100
250
160
400
40
--
ICBO
--
100
nA
IEBO
--
100
nA
V(BR)CBO
40
--
V
V(BR)CEO
25
--
V
V(BR)EBO
6
--
V
VCE(sat)
--
0.5
V
VBE(sat)
--
1.2
V
VBE(on)
--
1
V
FT
120
--
MHz
DC Current Gain
at VCE = 1 V, IC = 100 mA
Gain Group
C
D
HFE
at VCE = 1 V, IC = 800 mA
Collector Base Cutoff Current
at VCB = 35 V
Emitter Base Cutoff Current
at VEB = 6 V
Collector Base Breakdown Voltage
at IC = 100 μA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 μA
Collector Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
Base Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
Base Emitter On Voltage
at VCE = 1 V, IC = 10 mA
Transition Frequency
at VCE = 10 V, IC = 50 mA
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MMBT8050-1.5A
NPN Transistor
Collector Current IC (mA)
Typical Characteristic Curves
VCE=1V
DC Current Gain hFE
IB=3.0mA
IB=2.5mA
IB=2.0mA
IB=1.5mA
IB=1.0mA
IB=0.5mA
Collector Current IC (mA)
Collector-Emitter Voltage VCE (V)
IC=10IB
Saturation Voltage
VBE(sat), VCE(sat) (mV)
Collector Current IC (mA)
VCE=1V
VCE(sat)
Collector Current IC (mA)
Transition Frequency fT (MHz)
Base-Emitter Voltage VBE (V)
VCE=10V
Output Capacitance Cob (pF)
VBE(sat)
f=1MHz
IE=0
Collector-Base Voltage VCB (V)
Collector Current IC (mA)
Power Disspation PD (mW)
500
400
300
200
100
0
0
25
50
75
100
125
150
Ambient Temperature TA (℃)
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Revision:3.0 Jun-2022
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MMBT8050-1.5A
NPN Transistor
Package Outline
SOT-23
Dimensions in mm
Ordering Information
Device
Package
Shipping
MMBT8050-1.5A
SOT-23
3,000PCS/Reel&7inches
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Revision:3.0 Jun-2022
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MMBT8050-1.5A
NPN Transistor
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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MMBT8050-1.5A
NPN Transistor
Package Specifications
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23
Carrier Tape
30,000 pcs per box
10 reels per box
120,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T2
T1
Symbol
A
B
C
E
F
D
T1
T2
B
C
E
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
F
Reel (7'')
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