MMBT8050C

MMBT8050 NPN Transistor SOT-23 Features  For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code: MMBT8050C : D9C MMBT8050D : D9D 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Maximum Power Dissipation PD 350 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 MMBT8050 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit 100 -- 250 160 -- 400 40 -- -- ICBO -- -- 100 nA V(BR)CBO 40 -- -- V V(BR)CEO 25 -- -- V V(BR)EBO 6 -- -- V VCE(sat) -- -- 0.5 V VBE(sat) -- -- 1.2 V FT -- 100 -- MHz DC Current Gain at VCE = 1 V, IC = 100 mA Gain Group C D HFE at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Collector Base Breakdown Voltage at IC = 10 μA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 5 V, IC = 10 mA www.pingjingsemi.com Revision：2.0 Mar-2021 -- 2/6 MMBT8050 NPN Transistor Ta -25℃ = 0℃ 10 25℃ -25℃ 25℃ Ta =100℃ Power Dissipation PD (mW) Collector Current IC (mA) Ta = -25℃ Common Emitter VCE = 1V Ta =-25℃ Common Emitter IC/IB =25 Ta = 25℃ Collector Current IC (mA) Collector Current IC (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) Collector-Emitter Voltage VCE (V) Ta = 100℃ Ta =2 5℃ IB= 1mA Common Emitter VCE = 1V Ta =10 0℃ Common Emitter Ta = 25℃ DC Current Gain hFE Collector Current IC (mA) Typical Characteristic Curves Base-Emitter Voltage VBE (V) Mounted On 99.5% Alumina 10×8×0.6mm Ta = 25℃ Ambient Temperature Ta (℃) www.pingjingsemi.com Revision：2.0 Mar-2021 3/6 MMBT8050 NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBT8050 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 MMBT8050 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 MMBT8050 NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6