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MMBT3906DC

MMBT3906DC

  • 厂商:

    PJ(平晶)

  • 封装:

    DFN3_1X0.6MM

  • 描述:

    通用三极管 DFN3_1X0.6MM_EP PNP VCEO=40V VCE(sat)=0.4V Ic=200mA PD=250mW

  • 数据手册
  • 价格&库存
MMBT3906DC 数据手册
MMBT3906DC PNP Transistor DFN1x0.6-3L Features  For Switching and AF Amplifer Applications. 3.C Equivalent Circuit 2.E 3.Collector 1.B 1.Base 2.Emitter 3.Collector Marking Code : 1.Base 3E 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 200 mA Maximum Power Dissipation PD 250 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision:1.0 Dec-2021 1/4 MMBT3906DC PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 60 -- 80 -- 100 300 at VCE = -1 V, IC = -50 mA 60 -- at VCE = -1 V, IC = -100 mA 30 -- -ICBO -- 50 nA -IEBO -- 50 nA -V(BR)CBO 40 -- V -V(BR)CEO 40 -- V -V(BR)EBO 6 -- V -VCE(sat) -- 0.25 V -- 0.4 0.65 0.85 -- 0.95 FT 250 -- MHz Cob -- 4.5 pF DC Current Gain at VCE = -1 V, IC = -0.1 mA at VCE = -1 V, IC = -1 mA at VCE = -1 V, IC = -10 mA Collector Base Cutoff Current at VCB = -30V Emitter Base Cutoff Current at VEB = -6 V Collector Base Breakdown Voltage at IC = -10 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -10 μA HFE -- Collector Emitter Saturation Voltage at IC = -10 mA, IB = -1 mA at IC = -50 mA, IB = -5 mA Base Emitter Saturation Voltage at IC = -10 mA, IB = -1 mA -VBE(sat) at IC = -50 mA, IB = -5 mA Transition Frequency at VCE = -20 V, IC = -10 mA,f = 100 MHz Output Capacitance at VCB = -5 V, IE = 0, f = 1 MHz www.pingjingsemi.com Revision:1.0 Dec-2021 V 2/4 MMBT3906DC PNP Transistor Typical Characteristic Curves Power Dissipation: Ptot (mW) Output Capacitance Cob (pF) f=1MHz Cob Collector-Base Voltage VCB (V) Ambient Temperature Ta ( C) O Collector-Emitter Saturation Voltage VCE(sat) (V) IC/IB=10 DC Current Gain hFE Ta=125℃ Ta=-25℃ Ta=+25℃ VCE=1.0V Collector Current IC (mA) Base-Emitter Saturation Voltage VBE(sat) (V) Collector Current IC (mA) IC/IB=10 Collector Current IC (mA) www.pingjingsemi.com Revision:1.0 Dec-2021 3/4 MMBT3906DC PNP Transistor Package Outline DFN1x0.6-3L-0009 Dimensions in mm Ordering Information Device Package MMBT3906DC DFN1x0.6-3L www.pingjingsemi.com Revision:1.0 Dec-2021 Shipping 10,000PCS/Reel&7inches 4/4
MMBT3906DC 价格&库存

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MMBT3906DC
  •  国内价格
  • 50+0.04930
  • 150+0.04205
  • 1000+0.03480
  • 5000+0.03190

库存:0