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MMBT13001SA

MMBT13001SA

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 SOT23 NPN VCEO=420V VCE(sat)=1.05V Ic=0.15A PD=300mW

  • 数据手册
  • 价格&库存
MMBT13001SA 数据手册
MMBT13001SA NPN Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : 8D 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 420 V Emitter Base Voltage VEBO 10 V Collector Current IC 150 mA Maximum Power Dissipation PD 300 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision:2.0 Mar-2021 1/6 MMBT13001SA NPN Transistor Electrical Characteristics (TA=25℃) Parameter DC Current Gain at VCE = 20 V, IC = 10 mA Collector Base Cutoff Current at VCB = 700V Collector Emitter Cutoff Current at VCE = 420V Emitter Base Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Transition Frequency at VCE = 10 V, IC = 50 mA, f = 1 MHz www.pingjingsemi.com Revision:2.0 Mar-2021 Symbol Min. Max. Unit HFE 15 25 -- ICBO -- 100 μA ICEO -- 100 μA IEBO -- 100 μA V(BR)CBO 700 -- V V(BR)CEO 420 -- V V(BR)EBO 10 -- V VCE(sat) -- 1.05 V VBE(sat) -- 1.55 V FT 5 -- MHz 2/6 MMBT13001SA NPN Transistor Base Emitter Saturation Voltage VBE(sat) (V) Collector Emitter Saturation Voltage VCE(sat) (V) Typical Characteristic Curves Collector Current IC (A) Storage Time tS (μs) Collector Current IC (A) Collector Current IC (A) www.pingjingsemi.com Revision:2.0 Mar-2021 3/6 MMBT13001SA NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBT13001SA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision:2.0 Mar-2021 4/6 MMBT13001SA NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision:2.0 Mar-2021 5/6 MMBT13001SA NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision:2.0 Mar-2021 6/6
MMBT13001SA 价格&库存

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