FMMT718

FMMT718 PNP Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : 718 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 20 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1.5 A Maximum Power Dissipation PD 625 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison：2.0 Mar-2021 1/6 FMMT718 PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 300 600 300 520 at VCE = -2 V, IC = -2 A 150 300 at VCE = -2 V, IC = -4 A 35 200 -ICBO -- 100 nA -IEBO -- 100 nA -V(BR)CBO 20 -- V -V(BR)CEO 20 -- V -V(BR)EBO 5 -- V -- 40 -- 200 -- 220 -VBE(sat) -- 1 V -VBE(on) -- 1 V FT 150 -- MHz Cob -- 30 pF DC Current Gain Note1 at VCE = -2 V, IC = -10 mA at VCE = -2 V, IC = -100 mA HFE Collector Base Cutoff Current at VCB = -15 V Emitter Base Cutoff Current at VEB = -4 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -10 mA Emitter Base Breakdown Voltage at IE = -100 μA -- Collector Emitter Saturation Voltage Note1 at IC = -100 mA, IB = -10 mA -VCE(sat) at IC = -1 A, IB = -20 mA at IC = -1.5 A, IB = -50 mA Base Emitter Saturation Voltage at IC = -1.5 A, IB = -50 mA Base Emitter On Voltage Note1 at VCE = -2 V, IC = -2 A Transition Frequency at VCE = -10 V, IC = -50 mA Output Capacitance at VCB = -10 V, f = 1 MHz Note1 mV Note1: Measured under pulsed conditions, Pulse width ≤ 300 us, Duty cycle ≤ 2%. www.pingjingsemi.com Revision：2.0 Mar-2021 2/6 FMMT718 PNP Transistor Typical Characteristic Curves -500 1000 Common Emitter Ta=25℃ VCE= -2V -0.45mA (mA) -400 -0.5mA 800 -200 -0.3mA -0.25mA -0.2mA -0.15mA -100 Ta=100℃ hFE -0.35mA DC Current Gain IC -300 Collector Current -0.4mA 600 Ta=25℃ 400 200 -0.1mA -0 IB=-0.05mA -0 -1 -2 -3 -4 -5 Collector-Emitter Voltage VCE -6 -7 -1 -10 -1500 -1000 -1500 -100 Collector Current (V) IC (mA) -250 Collector-Emitter Saturation Voltage VCEsat (mV) β=30 Collector Current IC (mA) -1200 -900 Ta=100℃ -600 Ta=25℃ -300 -200 -150 -100 Ta=100℃ -50 Ta=25℃ VCE=-2V -0 -200 -400 -600 -800 -0 -1000 -1 -10 1.0 160 0.8 IC (mA) (W) 200 -1000 -1500 -100 Collector Current PD 120 Power Dissipation Transiton Frequency fT (MHz) Base-Emitter Voltage VBE (mV) 80 40 0.6 0.4 0.2 VCE=-10V 0 Ta=25℃ -0 -20 -40 Collector Current www.pingjingsemi.com Revision：2.0 Mar-2021 -60 IC (mA) -80 -100 0.0 0 25 50 75 Ambient Temperature 100 Ta 125 150 (℃) 3/6 FMMT718 PNP Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping FMMT718 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 FMMT718 PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 FMMT718 PNP Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6