FCX593

FCX593 PNP Transistor Features SOT-89 ⚫ High Current ⚫ Low Saturation Voltage ⚫ As Complementary Type of the NPN Transistor FCX493 is Recommended Equivalent Circuit 1.Base 2.Collector 3. Emitter 2.Collector Marking Code : P93 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 100 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Peak Collector Current -ICM 2 A Maximum Power Dissipation PD 500 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient www.pingjingsemi.com Revison：3.0 Feb-2022 Symbol Value Unit RθJA 250 ℃/W 1/7 FCX593 PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 100 -- 100 -- at VCE = -5 V, IC = -500 mA 100 300 at VCE = -5 V, IC = -1 A 50 -- -ICBO -- 100 nA -IEBO -- 100 nA -V(BR)CBO 120 -- V -V(BR)CEO 100 -- V -V(BR)EBO 5 -- V -VCE(sat) -- 0.2 V -- 0.3 -VBE(sat) -- 1.1 V -VBE(on) -- 1 V FT 50 -- MHz Cob -- 5 pF DC Current Gain at VCE = -5 V, IC = -1 mA at VCE = -5 V, IC = -250 mA Collector Base Cutoff Current at VCB = -100 V Emitter Base Cutoff Current at VEB = -4 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -100 μA HFE -- Collector Emitter Saturation Voltage at IC =- 250 mA, IB = -25 mA at IC = -500 mA, IB = -50 mA Base Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA Base Emitter On Voltage at VCE = -5 V, IC = -1 mA Transition Frequency at VCE = -10 V, IC = -50 mA, f = 100 MHz Output Capacitance at VCB = -10 V, f = 1 MHz www.pingjingsemi.com Revison：3.0 Feb-2022 2/7 FCX593 PNP Transistor 0.4 +25 ° C 0.3 IC/IB=10 IC/IB=50 0.2 0.1 0 1mA 10mA 100mA 1A 10A Collector-Emitter Saturation Voltage VCE(sat) (V) Collector-Emitter Saturation Voltage VCE(sat) (V) Typical Characteristic Curves 0.4 IA/IB=10 0.3 -55 °C +25 °C +100 °C 0.2 0.1 0 1mA 10mA Typical Current Gain hFE 400 VCE=5V +100 °C 300 200 100 +25 °C -55 °C 0 1mA 10mA 100mA 1A 10A 1.0 Collector Current IC (A) Base-Emitter On Voltage VBE(on) (V) 10A 0.6 -55 °C +25 °C +100 °C 0.4 0.2 0 1mA 10mA 100mA 10 1.0 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.2 0 10mA 100mA Collector Current IC Revison：3.0 Feb-2022 1A 0.8 Collector Current IC VCE=5V www.pingjingsemi.com 10A IC/IB=10 Collector Current IC 1mA 1A Collector Current IC Base-Emitter Saturation Voltage VBE(sat) (V) Collector Current IC 100mA 1A 10A 1 0.1 0.01 0.001 0.1V DC 1s 100ms 10ms 1ms 100µs 1V 10V 100V Collector-Emitter Voltage VCE 3/7 FCX593 PNP Transistor Package Outline SOT-89 Dimensions in mm www.pingjingsemi.com Revison：3.0 Feb-2022 4/7 FCX593 PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison：3.0 Feb-2022 5/7 FCX593 PNP Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 FCX593 PNP Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7