BC846~BC850
NPN Transistor
SOT-23
Features
For Switching and AF Amplifier Applications.
Equivalent Circuit
1.Base 2.Emitter 3.Collector
3.Collector
Marking Code :
BC846A : 1A BC846B : 1B
BC847A : 2E BC847B : 1F.
BC848A : 1J BC848B : 1K
BC849A : 1M BC849B : 1N
BC850A : 1S BC850B : 1T
1.Base
2.. Emitter
BC846C : 2C
BC847C : 1G
BC848C : 1L
BC849C : 1R
BC850C : 2G
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Collector Base Voltage
Symbol
BC846
BC847 BC850
Collector Emitter Voltage
VCBO
50
30
BC846
65
VCEO
BC848 BC849
BC846 BC847
BC848 BC849 BC850
Unit
80
BC848 BC849
BC847 BC850
Emitter Base Voltage
Value
45
V
V
30
VEBO
6
5
V
Collector Current
IC
100
mA
Peak Collector Current
ICM
200
mA
Maximum Power Dissipation
PD
300
mW
Junction Temperature
TJ
150
℃
TSTG
-65 to +150
℃
Storage Temperature Range
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Revision:3.0 May-2022
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BC846~BC850
NPN Transistor
Electrical Characteristics (TA=25℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
110
--
220
200
--
450
420
--
800
--
--
15
80
--
--
50
--
--
30
--
--
65
--
--
45
--
--
30
--
--
6
--
--
5
--
--
--
--
250
--
--
600
--
--
700
--
--
720
FT
--
300
--
MHz
Cob
--
--
6
pF
Cib
--
9
--
pF
NF
--
--
10
dB
--
--
4
BC849
--
--
4
BC850
--
--
3
DC Current Gain
at VCE = 5 V, IC = 2 mA
Gain Group
A
B
HFE
C
Collector Base Cutoff Current
ICBO
at VCB = 30V
--
nA
Collector Base Breakdown Voltage
at IC = 100 μA
BC846
BC847 BC850
V(BR)CBO
BC848 BC849
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
BC846
BC847 BC850
V(BR)CEO
BC848 BC849
V
Emitter Base Breakdown Voltage
at IE = 100 μA
BC846 BC847
V(BR)EBO
BC848 BC849 BC850
V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
VCE(sat)
at IC = 100 mA, IB = 5 mA
mV
Base Emitter On Voltage
at VCE = 5 V, IC = 2 mA
VBE(on)
at VCE = 5 V, IC = 10 mA
Transition Frequency
at VCE = 5 V, IC = 10 mA, f = 100 MHz
Output Capacitance
at VCB = 10 V, f = 1 MHz
Input Capacitance
at VEB = 0.5 V, f = 1 MHz
mV
Noise Figure
at VCE = -5 V, IC = -200 μA, f = 1 KHz,
RG = 2KΩ
BC846 BC847 BC848
BC849 BC850
at VCE = -5 V, IC = --200 μA,
f = 30~15000Hz, RG = 2KΩ,
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Revision:3.0 May-2022
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BC846~BC850
NPN Transistor
Typical Characteristic Curves
10
Ta=25℃
8
1000
Ta=100℃
20uA
Common Emitter
VCE= 5V
18uA
16uA
6
DC Current Gain hFE
Collector Current IC (mA)
3000
Common
Emitter
14uA
12uA
4
10uA
8uA
6uA
2
Ta=25℃
100
4uA
0
IB=2uA
0
1
2
3
4
6
5
10
7
10
1
Collector-Emitter Voltage VCE (V)
Collector Current
1000
500
Collector-Emitter Saturation
Voltage VCEsat (mV)
Base-Emitter Saturation Voltage
VBEsat (mV)
β=20
800
Ta=25℃
600
Ta=100 ℃
100
IC (mA)
β=20
Ta=100 ℃
100
Ta=25℃
400
200
0.1
1
Collector Current
10
0.1
100
10
IC (mA)
1
10
Collector Current
100
100
f=1MHz
IE=0/IC=0
Common Emitter
VCE=5V
Ta=25 ℃
Cib
10
C
(pF)
10
0.1
0.2
0.4
T=
a 25
℃
0.6
Base-Emitter Voltage VBE (V)
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Revision:3.0 May-2022
Capacitance
1
T=
a 1
00
℃
Collector Current IC (mA)
100
IC (mA)
0.8
1.0
Cob
1
0.1
0.1
1
10
30
Reverse Voltage VR (V)
3/6
BC846~BC850
NPN Transistor
Package Outline
SOT-23
Dimensions in mm
Ordering Information
Device
Package
Shipping
BC846~BC850
SOT-23
3,000PCS/Reel&7inches
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Revision:3.0 May-2022
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BC846~BC850
NPN Transistor
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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Revision:3.0 May-2022
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BC846~BC850
NPN Transistor
Package Specifications
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23
Carrier Tape
30,000 pcs per box
10 reels per box
120,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T2
T1
Symbol
A
B
C
E
F
D
T1
T2
B
C
E
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
F
Reel (7'')
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