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2SCR553SQ

2SCR553SQ

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT89-3

  • 描述:

    通用三极管 SOT89 NPN VCEO=50V VCE(sat)=0.35V Ic=2A PD=500mW

  • 数据手册
  • 价格&库存
2SCR553SQ 数据手册
2SCR553SQ NPN Transistor Features ⚫ ⚫ SOT-89 Low saturation voltage As Complementary Type of the PNP Transistor 2SAR553SQ is Recommended Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code : EL 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Maximum Power Dissipation PD 500 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison:3.0 Feb-2022 1/7 2SCR553SQ NPN Transistor Electrical Characteristics (TA=25℃) Parameter DC Current Gain at VCE = 2 V, IC = 50 mA Collector Base Cutoff Current at VCB = 50 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 700 mA, IB = 35 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 10 V, IE = 300 mA, f=100MHz www.pingjingsemi.com Revison:3.0 Feb-2022 Symbol Min. Typ. Max. Unit HFE 180 -- 450 -- ICBO -- -- 0.1 μA IEBO -- -- 0.1 μA V(BR)CBO 50 -- -- V V(BR)CEO 50 -- -- V V(BR)EBO 6 -- -- V VCE(sat) -- -- 0.35 V VBE(sat) -- -- 1.2 V FT -- 360 -- MHz 2/7 2SCR553SQ NPN Transistor Typical Characteristics Curves 0.12 VCE(sat) Collector Emitter Saturation Voltage (V) hFE DC Current Gain 300 250 200 150 100 50 0 1 10 100 1000 IC Colector Current (mA) www.pingjingsemi.com Revison:3.0 Feb-2022 10000 0.1 0.08 0.06 0.04 0.02 0 1 10 100 1000 IC Colector Current (mA) 3/7 2SCR553SQ NPN Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package 2SCR553SQ SOT-89 www.pingjingsemi.com Revison:3.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 4/7 2SCR553SQ NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison:3.0 Feb-2022 5/7 2SCR553SQ NPN Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison:3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 2SCR553SQ NPN Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison:3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7
2SCR553SQ 价格&库存

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