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2SC4373SQ-Y

2SC4373SQ-Y

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT89-3

  • 描述:

    通用三极管 SOT89 NPN VCEO=120V VCE(sat)=1V Ic=0.8A PD=500mW

  • 数据手册
  • 价格&库存
2SC4373SQ-Y 数据手册
2SC4373SQ NPN Transistor Features SOT-89 ⚫ High voltage ⚫ Excellent hFE characteristics Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code : 2SC4373SQ-O : CX 2SC4373SQ-Y : CY 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 5 V Collector Current IC 0.8 A Maximum Power Dissipation PD 0.5 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison:3.0 Feb-2022 1/7 2SC4373SQ NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit HFE 80 -- 160 -- 120 -- 240 ICBO -- -- 100 nA IEBO -- -- 100 nA V(BR)CBO 120 -- -- V V(BR)CEO 120 -- -- V V(BR)EBO 5 -- -- V VCE(sat) -- -- 1 V VCE(on) -- -- 1 V FT -- 120 -- MHz Cob -- -- 30 pF DC Current Gain at VCE = 5 V, IC = 100 mA Current Gain Group O Y Collector Base Cutoff Current at VCB = 120V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 0.1 mA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 0.1 mA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Collector Emitter On Voltage at VCE = 5 V, IC = 500 mA Transition Frequency at VCE = 5 V, IC = 500 mA Output Capacitance at VCB = 10 V,IE = 0, f = 1 MHz www.pingjingsemi.com Revison:3.0 Feb-2022 2/7 2SC4373SQ NPN Transistor Typical Characteristic Curves DC Current hFE Collector Current IC (mA) Common Emitter Ta=25℃ Common Emitter IC/IB=10 DC O pe ra tio n Single Nonrepetitive Pulse Curves Must Be Derated Linearly With Increase In Temperature Ta=-25℃ Common Emitter VCE=5V Base-Emitter Voltage VBE (V) Power Dissipation PD (W) Collector Current IC (mA) Collector Current IC (mA) IC Max(Pulse) IC Max(Conti nous) Ta=25℃ Collector Current IC (mA) Collector Current IC (A) Collector Emitter Saturation Voltage VCE(sat) (V) Collector-Emitter Voltage VCE(V) Ta=100℃ Common Emitter VCE=5V ① Mounted On Ceramic ② Substrate (250mm2×0.8t) Ta=25℃ Ambient Temperature Ta (℃) Collector-Emitter Voltage VCE(V) www.pingjingsemi.com Revison:3.0 Feb-2022 3/7 2SC4373SQ NPN Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package 2SC4373SQ SOT-89 www.pingjingsemi.com Revison:3.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 4/7 2SC4373SQ NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison:3.0 Feb-2022 5/7 2SC4373SQ NPN Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison:3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 2SC4373SQ NPN Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison:3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7
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