2SB772SQ-E

2SB772SQ PNP Transistor Features SOT-89 ⚫ High current output up to 3A ⚫ Low saturation votage ⚫ Complement to 2SB882SQ Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code : 1.Base 2SB772 -X 3.. Emitter X: R/Q/P/E Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 3 A Peak Collector Current -ICM 7 A Base Current -IB 0.6 A Maximum Power Dissipation PD 1 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison：3.0 Feb-2022 1/6 2SB772SQ PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit 30 -- -- 60 -- 120 100 -- 200 P 160 -- 320 E 200 -- 400 -ICBO -- -- 1 μA -IEBO -- -- 1 μA -V(BR)CBO 40 -- -- V -V(BR)CEO 30 -- -- V -V(BR)EBO 5 -- -- V -VCE(sat) -- -- 0.5 V -VBE(sat) -- -- 2 V FT -- 80 -- MHz Cob -- 55 -- pF DC Current Gain at VCE = -2 V, IC = -20 mA at VCE = -2 V, IC = -1 A Current Gain Group R Q Collector Base Cutoff Current at VCB = -30V Emitter Base Cutoff Current at VEB = -3 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -100 μA Collector Emitter Saturation Voltage at IC = -2 A, IB = -200 mA Base Emitter Saturation Voltage at IC = -2 A, IB = -200 mA Transition Frequency at VCE = -5 V, IC = -100 mA Output Capacitance at VCB = -10 V, f = 1 MHz www.pingjingsemi.com Revison：3.0 Feb-2022 HFE -- 2/6 2SB772SQ PNP Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package 2SB772SQ SOT-89 www.pingjingsemi.com Revison：3.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 3/6 2SB772SQ PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison：3.0 Feb-2022 4/6 2SB772SQ PNP Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 5/6 2SB772SQ PNP Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 6/6