2SB766ASQ
PNP Transistor
Features
SOT-89
⚫
Low saturation votage
⚫
Large power dissipation
Equivalent Circuit
2.Collector
1.Base 2.Collector 3. Emitter
Marking Code :
2SB766ASQ-Q : BQ
2SB766ASQ-R : BR
2SB766ASQ-S : BS
1.Base
3.. Emitter
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
60
V
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
1
A
Maximum Power Dissipation
PD
0.5
W
Junction Temperature
TJ
150
℃
TSTG
-55 to +150
℃
Storage Temperature Range
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Revison:2.0 Feb-2022
1/7
2SB766ASQ
PNP Transistor
Electrical Characteristics (TA=25℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
85
--
170
120
--
240
170
--
340
50
--
--
-ICBO
--
--
0.1
μA
-IEBO
--
--
0.1
μA
-V(BR)CBO
60
--
--
V
-V(BR)CEO
50
--
--
V
-V(BR)EBO
5
--
--
V
-VCE(sat)
--
--
0.4
V
-VBE(sat)
--
--
1.2
V
FT
--
200
--
MHz
Cob
--
--
30
pF
DC Current Gain
at VCE = -10 V, IC = -500 mA Current Gain Group
Q
R
S
HFE
at VCE = -5 V, IC = -1 A
Collector Base Cutoff Current
at VCB = -20V
Emitter Base Cutoff Current
at VEB = -4 V
Collector Base Breakdown Voltage
at IC = -10 μA
Collector Emitter Breakdown Voltage
at IC = -2 mA
Emitter Base Breakdown Voltage
at IE = -10 μA
Collector Emitter Saturation Voltage
at IC = -500 mA, IB = -50 mA
Base Emitter Saturation Voltage
at IC = -500 mA, IB = -50 mA
Transition Frequency
at VCE = -10 V, IC = -50 mA, f = 200 MHz
Output Capacitance
at VCB = -10 V, IE=0, f = 1 MHz
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Revison:2.0 Feb-2022
--
2/7
2SB766ASQ
PNP Transistor
Typical Characteristic Curves
1000
-1200
-5mA
-4.5mA
-4mA
-3.5mA
o
Ta=100 C
-3mA
-800
DC Current Gain hFE
Collector Current
IC (mA)
-1000
Common
Emitter
Ta=25℃
-2.5mA
-600
-2mA
-1.5mA
-400
o
Ta=25 C
100
-1mA
-200
VCE= -10V
IB=-0.5mA
-0
-0
-2
-4
-6
-8
Collector-Emitter Voltage
-10
-12
10
-10
-14
-100
VCE (V)
-1000
Collector Current
-1000
IC (mA)
-400
-800
Collector-Emitter Saturation Voltage
VCE(sat) (mV)
Base-Emitter Saturation Voltage
VBE(sat) (mV)
β=10
Ta=25℃
-600
Ta=100℃
-400
-300
-200
Ta=100℃
-100
Ta=25℃
β=10
-200
-1
-10
-100
Collector Current
-0
-1000
-1
-10
-100
Collector Current
IC (mA)
-1000
IC (mA)
-1000
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
Cib
100
C
-600
o
Ta=100 C
Capacitance
Collector Current
IC (mA)
-800
Ta=25℃
-400
Cob
10
-200
VCE=-10V
-0
-200
-400
-600
Base-Emitter Voltage
-800
VBE
-1
-10
Reverse Voltage
(mV)
300
0.6
250
0.5
VR
-20
(V)
(W)
(MHz)
PD
200
Power Dissipation
fT
Transition Frequency
1
-0.1
-1000
150
100
50
VCE=-10V
0.4
0.3
0.2
0.1
o
Ta=25 C
0
-0
-20
-40
Collector Current
www.pingjingsemi.com
Revison:2.0 Feb-2022
-60
IC (mA)
-80
-100
0.0
0
25
50
75
100
125
150
Ambient Temperature Ta (℃)
3/7
2SB766ASQ
PNP Transistor
Package Outline
SOT-89
Dimensions in mm
Ordering Information
Device
Package
2SB766ASQ
SOT-89
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Revison:2.0 Feb-2022
Shipping
1,000PCS/Reel&7inches
3,000PCS/Reel&13inches
4/7
2SB766ASQ
PNP Transistor
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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Revison:2.0 Feb-2022
5/7
2SB766ASQ
PNP Transistor
Package Specifications
The method of packaging (1,000PCS/Reel&7inches)
Cover Tape
1,000 pcs per reel
SOT-89
Carrier Tape
8,000 pcs per box
8 reels per box
32,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T1
E
B
G
F
Reel (7'')
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Revison:2.0 Feb-2022
symbol
Value(unit:mm)
A
Φ179±1
B
60.5±0.2
C
15.3±0.3
D
12.5~13.7
E
Φ13.5±0.2
F
Φ10.0±0.2
G
2.7±0.2
T1
1.0±0.2
C
6/7
2SB766ASQ
PNP Transistor
Package Specifications
The method of packaging (3,000PCS/Reel&13inches)
3,000 pcs per reel
SOT-89
9,000 pcs per box
3 reels per box
36,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
B
A
T
E
D
F
Reel (13'')
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Revison:2.0 Feb-2022
symbol
Value(unit:mm)
A
Φ330±1
B
12.7±0.5
C
16.5±0.3
D
Φ99.5±0.5
E
Φ13.6±0.3
F
2.8±0.3
T1
1.9±0.2
C
7/7
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