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2SA1213SQ-Y

2SA1213SQ-Y

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT89-3

  • 描述:

    通用三极管 SOT89 PNP VCEO=50V VCE(sat)=0.5V Ic=2A PD=500mW

  • 数据手册
  • 价格&库存
2SA1213SQ-Y 数据手册
2SA1213SQ PNP Transistor Features SOT-89 ⚫ Low Saturation Voltage ⚫ High Speed Switching Time ⚫ As Complementary Type of the NPN Transistor 2SC2873SQ is Recommended. Equivalent Circuit 1.Base 2.Collector 3. Emitter 2.Collector Marking Code : 2SA1213SQ-O : NX 2SA1213SQ-Y : NY 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Maximum Power Dissipation PD 0.5 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Symbol Value Unit RθJA 250 ℃/W Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient www.pingjingsemi.com Revison:4.0 Feb-2022 1/7 2SA1213SQ PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit 70 -- 140 120 -- 240 20 -- -- -ICBO -- -- 100 nA -IEBO -- -- 100 nA -V(BR)CBO 50 -- -- V -V(BR)CEO 50 -- -- V -V(BR)EBO 5 -- -- V -VCE(sat) -- -- 0.5 V -VBE(sat) -- -- 1.2 V FT 100 -- -- MHz Cob -- 40 -- pF DC Current Gain at VCE = -2 V, IC = -500 mA Current Gain Group O Y HFE at VCE = -2 V, IC = -2 A Collector Base Cutoff Current at VCB = -50 V Emitter Base Cutoff Current at VEB = -5 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -100 μA Collector Emitter Saturation Voltage at IC = -1 A, IB = -50 mA Base Emitter Saturation Voltage at IC = -1 A, IB = -50 mA Transition Frequency at VCE = -2 V, IC = -500 mA Output Capacitance at VCB = -10 V,IE = 0, f = 1MHz www.pingjingsemi.com Revison:4.0 Feb-2022 -- 2/7 2SA1213SQ PNP Transistor Typical Characteristic Curves 1000 -1000 Common Emitter Ta=25 ℃ -6mA -5.4mA -4.8mA 300 -4.2mA Ta=100 ℃ -3.6mA -600 DC Current Gain hFE Collector Current IC (mA) -800 Common Emitter VCE=-2V -3mA -2.4mA -400 -1.8mA -1.2mA -200 Ta=25 ℃ 100 30 IB=-600uA -0 -0.0 10 -0.5 -1.0 -1.5 -2.0 Collector-Emitter Voltage -2.5 VCE -3.0 -3.5 -1 -3 -10 (V) -100 -30 Collector Current -1000 -1000 -500 -2000 IC (mA) -1000 Collector-Emitter Saturation Voltage VCEsat (mV) Base-Emitter Saturation Volatge VBEsat (mV) Ta=25 ℃ Ta=100 ℃ -300 -100 Ta=100 ℃ -30 Ta=25 ℃ β=20 -200 -1 -10 -10 -3 Collector Current -300 -100 -30 -1000 -1 -30 -10 IC (mA) Collector Current -1000 -100 -300 -1000 IC (mA) 1000 f=1MHz IE=0/IC=0 Ta=25 ℃ 300 (pF) -100 C Ta=100 ℃ -30 Ta=25 ℃ Capacitance Collector Current IC (mA) -300 -10 Cib 100 Cob 30 -3 VCE=-2V -1 -0.0 -0.2 -0.4 Base-Emitter Volatge www.pingjingsemi.com Revison:4.0 Feb-2022 -0.6 VBE (V) -0.8 -1.0 10 -0.1 -0.3 -1 -3 -10 -20 Reverse Voltage VR (V) 3/7 2SA1213SQ PNP Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package 2SA1213SQ SOT-89 www.pingjingsemi.com Revison:4.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 4/7 2SA1213SQ PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison:4.0 Feb-2022 5/7 2SA1213SQ PNP Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison:4.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 2SA1213SQ PNP Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison:4.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7
2SA1213SQ-Y 价格&库存

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2SA1213SQ-Y
    •  国内价格
    • 10+0.39204
    • 100+0.31860
    • 300+0.28188
    • 3000+0.23048
    • 6000+0.20844
    • 9000+0.19743

    库存:2515