2SA1213SQ
PNP Transistor
Features
SOT-89
⚫
Low Saturation Voltage
⚫
High Speed Switching Time
⚫
As Complementary Type of the NPN
Transistor 2SC2873SQ is Recommended.
Equivalent Circuit
1.Base 2.Collector 3. Emitter
2.Collector
Marking Code :
2SA1213SQ-O : NX
2SA1213SQ-Y : NY
1.Base
3.. Emitter
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
50
V
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
2
A
Maximum Power Dissipation
PD
0.5
W
Junction Temperature
TJ
150
℃
TSTG
-55 to +150
℃
Symbol
Value
Unit
RθJA
250
℃/W
Storage Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance Junction to Ambient
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Revison:4.0 Feb-2022
1/7
2SA1213SQ
PNP Transistor
Electrical Characteristics (TA=25℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
70
--
140
120
--
240
20
--
--
-ICBO
--
--
100
nA
-IEBO
--
--
100
nA
-V(BR)CBO
50
--
--
V
-V(BR)CEO
50
--
--
V
-V(BR)EBO
5
--
--
V
-VCE(sat)
--
--
0.5
V
-VBE(sat)
--
--
1.2
V
FT
100
--
--
MHz
Cob
--
40
--
pF
DC Current Gain
at VCE = -2 V, IC = -500 mA Current Gain Group
O
Y
HFE
at VCE = -2 V, IC = -2 A
Collector Base Cutoff Current
at VCB = -50 V
Emitter Base Cutoff Current
at VEB = -5 V
Collector Base Breakdown Voltage
at IC = -100 μA
Collector Emitter Breakdown Voltage
at IC = -1 mA
Emitter Base Breakdown Voltage
at IE = -100 μA
Collector Emitter Saturation Voltage
at IC = -1 A, IB = -50 mA
Base Emitter Saturation Voltage
at IC = -1 A, IB = -50 mA
Transition Frequency
at VCE = -2 V, IC = -500 mA
Output Capacitance
at VCB = -10 V,IE = 0, f = 1MHz
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Revison:4.0 Feb-2022
--
2/7
2SA1213SQ
PNP Transistor
Typical Characteristic Curves
1000
-1000
Common
Emitter
Ta=25 ℃
-6mA
-5.4mA
-4.8mA
300
-4.2mA
Ta=100 ℃
-3.6mA
-600
DC Current Gain hFE
Collector Current
IC (mA)
-800
Common Emitter
VCE=-2V
-3mA
-2.4mA
-400
-1.8mA
-1.2mA
-200
Ta=25 ℃
100
30
IB=-600uA
-0
-0.0
10
-0.5
-1.0
-1.5
-2.0
Collector-Emitter Voltage
-2.5
VCE
-3.0
-3.5
-1
-3
-10
(V)
-100
-30
Collector Current
-1000
-1000
-500
-2000
IC (mA)
-1000
Collector-Emitter Saturation Voltage
VCEsat (mV)
Base-Emitter Saturation Volatge
VBEsat (mV)
Ta=25 ℃
Ta=100 ℃
-300
-100
Ta=100 ℃
-30
Ta=25 ℃
β=20
-200
-1
-10
-10
-3
Collector Current
-300
-100
-30
-1000
-1
-30
-10
IC (mA)
Collector Current
-1000
-100
-300
-1000
IC (mA)
1000
f=1MHz
IE=0/IC=0
Ta=25 ℃
300
(pF)
-100
C
Ta=100 ℃
-30
Ta=25 ℃
Capacitance
Collector Current IC (mA)
-300
-10
Cib
100
Cob
30
-3
VCE=-2V
-1
-0.0
-0.2
-0.4
Base-Emitter Volatge
www.pingjingsemi.com
Revison:4.0 Feb-2022
-0.6
VBE (V)
-0.8
-1.0
10
-0.1
-0.3
-1
-3
-10
-20
Reverse Voltage VR (V)
3/7
2SA1213SQ
PNP Transistor
Package Outline
SOT-89
Dimensions in mm
Ordering Information
Device
Package
2SA1213SQ
SOT-89
www.pingjingsemi.com
Revison:4.0 Feb-2022
Shipping
1,000PCS/Reel&7inches
3,000PCS/Reel&13inches
4/7
2SA1213SQ
PNP Transistor
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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Revison:4.0 Feb-2022
5/7
2SA1213SQ
PNP Transistor
Package Specifications
The method of packaging (1,000PCS/Reel&7inches)
Cover Tape
1,000 pcs per reel
SOT-89
Carrier Tape
8,000 pcs per box
8 reels per box
32,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T1
E
B
G
F
Reel (7'')
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Revison:4.0 Feb-2022
symbol
Value(unit:mm)
A
Φ179±1
B
60.5±0.2
C
15.3±0.3
D
12.5~13.7
E
Φ13.5±0.2
F
Φ10.0±0.2
G
2.7±0.2
T1
1.0±0.2
C
6/7
2SA1213SQ
PNP Transistor
Package Specifications
The method of packaging (3,000PCS/Reel&13inches)
3,000 pcs per reel
SOT-89
9,000 pcs per box
3 reels per box
36,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
B
A
T
E
D
F
Reel (13'')
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Revison:4.0 Feb-2022
symbol
Value(unit:mm)
A
Φ330±1
B
12.7±0.5
C
16.5±0.3
D
Φ99.5±0.5
E
Φ13.6±0.3
F
2.8±0.3
T1
1.9±0.2
C
7/7
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