2N5401SQ

2N5401SQ PNP Transistor Features SOT-89 ⚫ For Switching and AF Amplifier Applications ⚫ Silicon Epitaxial Chip Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code : B2L 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 600 mA Maximum Power Dissipation PD 625 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison：3.0 Feb-2022 1/7 2N5401SQ PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 50 -- 60 240 50 -- -ICBO -- 50 nA -IEBO -- 50 nA -V(BR)CBO 160 -- V -V(BR)CEO 150 -- V -V(BR)EBO 5 -- V -VCE(sat) -- 0.2 V -- 0.5 -- 1 -- 1 FT 100 300 MHz Cob -- 6 pF DC Current Gain at VCE = -5 V, IC = -1 mA at VCE = -5 V, IC = -10 mA HFE at VCE = -5 V, IC = -50 mA Collector Base Cutoff Current at VCB = -120 V Emitter Base Cutoff Current at VEB = -3 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -10 μA -- Collector Emitter Saturation Voltage at IC = -10 mA, IB = -1 mA at IC = -50 mA, IB = -5 mA Base Emitter Saturation Voltage at IC = -10 mA, IB = -1 mA -VBE(sat) at IC = -50 mA, IB = -5 mA Transition Frequency at VCE = -10 V, IC = -10 mA, f = 100 MHz Output Capacitance at VCB = -10 V, f = 1 MHz www.pingjingsemi.com Revison：3.0 Feb-2022 V 2/7 2N5401SQ PNP Transistor Typical Characteristic Curves Collector-Emitter Saturation Voltage VCE(sat) (V) 700 Collector Power Dissipation Pc (mW) 600 500 400 300 200 100 0 0 25 50 75 100 125 150 Ta (℃) Collector Current IC (mA) DC Current hFE (Normalized) Base-Emitter On Voltage VBE(on) (V) Ambient Temperature Collector Current IC (mA) ft Gain Bandwidth Product (MHz) Collector Current IC (mA) Collector Current IC (mA) www.pingjingsemi.com Revison：3.0 Feb-2022 3/7 2N5401SQ PNP Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package 2N5401SQ SOT-89 www.pingjingsemi.com Revison：3.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 4/7 2N5401SQ PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison：3.0 Feb-2022 5/7 2N5401SQ PNP Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 2N5401SQ PNP Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7