13003SQ

13003SQ NPN Transistor Features SOT-89 ⚫ For switching and amplifier applications ⚫ Low collector saturation voltage Equivalent Circuit 1.Base 2.Collector 3. Emitter Marking Code : 13003 2.Collector 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 430 V Emitter Base Voltage VEBO 9 V Collector Current IC 1.5 A Peak Collector Current ICM 3 A Maximum Power Dissipation PD 800 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison：3.0 Feb-2022 1/7 13003SQ NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 10 40 8 40 15 40 ICBO -- 10 μA IEBO -- 10 μA V(BR)CBO 800 -- V V(BR)CEO 430 -- V V(BR)EBO 9 -- V VCE(sat) -- 0.5 V -- 1 -- 1 -- 1.2 4 -- DC Current Gain at VCE = 2 V, IC = 500 mA at VCE = 2 V, IC = 1 A HFE at VCE = 5 V, IC = 200 mA Collector Base Cutoff Current at VCB = 700 V Emitter Base Cutoff Current at VEB = 9 V Collector Base Breakdown Voltage at IC = 500 μA Collector Emitter Breakdown Voltage at IC = 5 mA Emitter Base Breakdown Voltage at IE = 500 μA -- Collector Emitter Saturation Voltage at IC = 500 mA, IB = 100 mA at IC = 1 A, IB = 250 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 100 mA VBE(sat) at IC = 1 A, IB = 250 mA Transition Frequency at VCE = 10 V, IC = 100 mA www.pingjingsemi.com Revison：3.0 Feb-2022 FT V MHz 2/7 13003SQ NPN Transistor DC Current Gain hFE IC Collector Current (A) Typical Characteristic Curves IC Collector Current (A) www.pingjingsemi.com Revison：3.0 Feb-2022 IC Collector Current (A) VBEsat Base-Emitter Saturation Voltage (V) VCEsat Collecotr-Emitter Saturation Voltage (V) VCE Collector-Emitter Voltage (V) IC Collector Current (A) 3/7 13003SQ NPN Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package 13003SQ SOT-89 www.pingjingsemi.com Revison：3.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 4/7 13003SQ NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison：3.0 Feb-2022 5/7 13003SQ NPN Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 13003SQ NPN Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7