BCV27

BCV27 BCV47 NPN Darlington Transistor SOT-23 Features  High Collector Current  High Current Gain Equivalent Circuit 1.Base 2.Emitter 3.Collector C B Marking Code: BCV27 : FF BCV47 : FH E Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Collector Base Voltage Symbol BCV27 BCV47 Collector Emitter Voltage BCV27 BCV47 Emitter Base Voltage VCBO VCEO Value 40 80 30 60 Unit V V VEBO 10 V Collector Current IC 500 mA Peak Collector Current ICM 800 mA Base Current IB 100 mA Maximum Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -65 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Apr-2021 1/6 BCV27 BCV47 NPN Darlington Transistor Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. Unit BCV27 4000 -- -- BCV47 2000 -- -- 10000 -- -- BCV47 4000 -- -- BCV27 20000 -- -- BCV47 10000 -- -- -- -- 100 -- -- 100 IEBO -- -- 100 nA V(BR)CBO 40 -- -- V 80 -- -- 30 -- -- 60 -- -- V(BR)EBO 10 -- -- V VCE(sat) -- -- 1 V VBE(sat) -- -- 1.5 V VBE(on) -- -- 1.4 V FT -- 220 -- MHz DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA BCV27 HFE -- Collector Base Cutoff Current at VCB = 30V BCV27 at VCB = 60V BCV47 Emitter Base Cutoff Current at VEB = 10 V ICBO nA Collector Base Breakdown Voltage at IC = 100 μA BCV27 BCV47 Collector Emitter Breakdown Voltage at IC = 10 mA BCV27 V(BR)CEO BCV47 Emitter Base Breakdown Voltage at IE = 10 μA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On Voltage at VCE = 5 V, IC = 10 mA Transition Frequency at VCE = 5 V, IC = 30 mA, f = 100 MHz www.pingjingsemi.com Revision：2.0 Apr-2021 V 2/6 BCV27 BCV47 NPN Darlington Transistor Typical Characteristic Curves 250 hFE VCE= 5V 2.0uA DC Current Gain Collector Current IC (mA) 200 1000k 4.0uA 3.6uA 3.2uA 2.8uA 2.4uA Common Emitter Ta=25℃ 1.6uA 150 1.2uA 100 o Ta=100 C 100k o Ta=25 C 0.8uA 50 IB=0.4uA 0 0 4 2 8 6 Collector-Emitter Voltage VCE 10k 10 IC 500 (mA) 1200 =1000 =1000 Collector-Emitter Saturation Voltage VCEsat (mV) Base-Emitter Saturation Voltage VBEsat (V) 100 Collector Current 2.0 1.5 o Ta=25 C 1.0 o Ta=100 C 0.5 10 1 (V) 10 1 100 Collector Current IC 1000 800 600 o Ta=100 C 400 200 0 500 o Ta=25 C 1 (mA) 500 100 10 Collector Current IC 500 (mA) 15 400 o Ta=25 C (pF) 12 C 300 o Ta=100 C Capacitance Collector Current IC (mA) f=1MHz IE=0 / IC=0 200 o Ta=25 C 100 9 Cib 6 Cob 3 VCE=5V 0 0.4 0.6 0.8 1.0 1.4 1.2 Base-Emitter Voltage 1.6 1.8 0 10 1 Reverse Voltage VBE (V) VR 20 (V) Power Dissipation PD (mW) 300 200 100 0 0 25 50 75 Ambient Temperature www.pingjingsemi.com Revision：2.0 Apr-2021 100 Ta 125 150 (℃) 3/6 BCV27 BCV47 NPN Darlington Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping BCV27,BCV47 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Apr-2021 4/6 BCV27 BCV47 NPN Darlington Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Apr-2021 5/6 BCV27 BCV47 NPN Darlington Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Apr-2021 6/6