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MM1Z5V1W

MM1Z5V1W

  • 厂商:

    PJ(平晶)

  • 封装:

    SOD123W

  • 描述:

    稳压二极管 SOD123W Vr=1.5V Ir=2μA Vz=5.1V Pd=500mW

  • 数据手册
  • 价格&库存
MM1Z5V1W 数据手册
MM1Z2V0W~MM1Z75W Silicon Planar Zener Diodes SOD-123W Features  Total power dissipation: 500mW max  Designed for surface mount 2  Wide zener reverse voltage range:2.0V to 75V  Tolerance approximately ± 5% 1 1.Cathode 2.Anode Absolute Maximum Ratings at TA = 25 ℃ Parameter Maximum Power Dissipation Thermal Resistance,Junction-to-Ambient Note1 Junction Temperature Storage Temperature Range Symbols Value Unit PD 500 mW RθJA 340 °C/W TJ 150 °C TSTG -55 to +150 °C Note: 1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads. Electrical Characteristics at TA = 25 ℃ Parameter Forward Voltage at IF = 10 mA www.pingjingsemi.com Revision:3.0 May-2022 Symbols Max. Unit VF 0.9 V 1/4 MM1Z2V0W~MM1Z75W Silicon Planar Zener Diodes Characteristics at TA = 25 ℃ Type Marking Zener Voltage Range Note1 Code Dynamic IZT VZT at IZT Impedance Reverse Current ZZT at IZT IR at VR Min.(V) Nom.(V) Max.(V) (mA) Max.(Ω) Max.(μA) (V) MM1Z2V0W 4A 1.8 2.0 2.15 5 100 120 0.5 MM1Z2V2W 4B 2.08 2.2 2.33 5 100 120 0.7 MM1Z2V4W 4C 2.28 2.4 2.56 5 100 120 1 MM1Z2V7W 4D 2.5 2.7 2.9 5 110 120 1 MM1Z3V0W 4E 2.8 3.0 3.2 5 120 50 1 MM1Z3V3W 4F 3.1 3.3 3.5 5 130 20 1 MM1Z3V6W 4H 3.4 3.6 3.8 5 130 10 1 MM1Z3V9W 4J 3.7 3.9 4.1 5 130 5 1 MM1Z4V3W 4K 4 4.3 4.6 5 130 5 1 MM1Z4V7W 4M 4.4 4.7 5 5 130 2 1 MM1Z5V1W 4N 4.8 5.1 5.4 5 130 2 1.5 MM1Z5V6W 4P 5.2 5.6 6 5 80 1 2.5 MM1Z6V2W 4R 5.8 6.2 6.6 5 50 1 3 MM1Z6V8W 4X 6.4 6.8 7.2 5 30 0.5 3.5 MM1Z7V5W 4Y 7 7.5 7.9 5 30 0.5 4 MM1Z8V2W 4Z 7.7 8.2 8.7 5 30 0.5 5 MM1Z9V1W 5A 8.5 9.1 9.6 5 30 0.5 6 MM1Z10W 5B 9.4 10 10.6 5 30 0.1 7 MM1Z11W 5C 10.4 11 11.6 5 30 0.1 8 MM1Z12W 5D 11.4 12 12.7 5 35 0.1 9 MM1Z13W 5E 12.4 13 14.1 5 35 0.1 10 MM1Z15W 5F 13.8 15 15.6 5 40 0.1 11 MM1Z16W 5H 15.3 16 17.1 5 40 0.1 12 MM1Z18W 5J 16.8 18 19.1 5 45 0.1 13 MM1Z20W 5K 18.8 20 21.2 5 50 0.1 15 MM1Z22W 5M 20.8 22 23.3 5 55 0.1 17 MM1Z24W 5N 22.8 24 25.6 5 60 0.1 19 MM1Z27W 5P 25.1 27 28.9 5 70 0.1 21 MM1Z30W 5R 28 30 32 5 80 0.1 23 MM1Z33W 5X 31 33 35 5 80 0.1 25 MM1Z36W 5Y 34 36 38 5 90 0.1 27 MM1Z39W 5Z 37 39 41 2.5 100 2 30 MM1Z43W 6A 40 43 46 2.5 130 2 33 MM1Z47W 6B 44 47 50 2.5 150 2 36 MM1Z51W 6C 48 51 54 2.5 180 1 39 MM1Z56W 6D 52 56 60 2.5 180 1 43 MM1Z62W 6E 58 62 66 2.5 200 0.2 47 MM1Z68W 6F 64 68 72 2.5 250 0.2 52 MM1Z75W 6H 70 75 79 2.5 300 0.2 57 Note: 1. VZT is tested with 20ms pulse. www.pingjingsemi.com Revision:3.0 May-2022 2/4 MM1Z2V0W~MM1Z75W Silicon Planar Zener Diodes Power Dissipation ( W ) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 25 75 50 100 125 150 175 Transient Thermal Impedance (°C/W) Typical Characteristic Curves 2000 1000 100 10 0.01 0.1 T A , Temperature (°C) 100 10 t, Pulse Duration(sec) 10 30 25 27V 3.3V 4.7V 5.6V I ZT Zener current(mA) 2.4V I ZT Zener current(mA) 1 7.5V 10V 20 12V 15V 18V 15 20V 10 5 0.0 33V 43V 8 51V 62V 75V 6 4 2 0.0 4 2 6 8 10 12 14 16 18 20 22 24 Vz,Zener voltage(V) 10 20 30 40 50 60 70 80 Vz,Zener voltage(V) Leakage current (uA) 100 10 1.0 +125℃ 0.1 0.01 +25℃ 0.001 0.0001 0 20 10 30 40 50 60 70 80 Nominal zener voltage, V www.pingjingsemi.com Revision:3.0 May-2022 3/4 MM1Z2V0W~MM1Z75W Silicon Planar Zener Diodes Package Outline SOD-123W Dimensions in mm A D b E A1 C ∠ALL ROUND L1 E1 A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT mm mil www.pingjingsemi.com Revision:3.0 May-2022 8 ∠ 9° 4/4
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