MM1Z18BW

MM1Z2V0BW~MM1Z75BW Silicon Planar Zener Diodes SOD-123W Features  Total power dissipation: 500mW max  Designed for surface mount 2  Wide zener reverse voltage range:2.0V to 75V  Tolerance Approximately ± 2% 1 1.Cathode 2.Anode Absolute Maximum Ratings at TA = 25 ℃ Parameter Maximum Power Dissipation Thermal Resistance,Junction-to-Ambient Note1 Junction Temperature Storage Temperature Range Symbols Value Unit PD 500 mW RθJA 340 °C/W TJ 150 °C TSTG -55 to +150 °C Note: 1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads. Electrical Characteristics at TA = 25 ℃ Parameter Forward Voltage at IF = 10 mA www.pingjingsemi.com Revision：4.0 May-2022 Symbols Max. Unit VF 0.9 V 1/4 MM1Z2V0BW~MM1Z75BW Silicon Planar Zener Diodes Characteristics at TA = 25 ℃ Type Marking MM1Z2V0BW Zener Voltage Range Note1 Code A4 Dynamic IZT VZT at IZT Impedance Reverse Current ZZT at IZT IR at VR Min.(V) Nom.(V) Max.(V) (mA) Max.(Ω) Max.(μA) (V) 1.96 2 2.04 5 100 120 0.5 MM1Z2V2BW B4 2.16 2.2 2.24 5 100 120 0.7 MM1Z2V4BW C4 2.35 2.4 2.45 5 100 120 1 MM1Z2V7BW D4 2.65 2.7 2.75 5 110 120 1 MM1Z3V0BW E4 2.94 3 3.06 5 120 50 1 MM1Z3V3BW F4 3.23 3.3 3.37 5 130 20 1 MM1Z3V6BW H4 3.53 3.6 3.67 5 130 10 1 MM1Z3V9BW J4 3.82 3.9 3.98 5 130 5 1 MM1Z4V3BW K4 4.21 4.3 4.39 5 130 5 1 MM1Z4V7BW M4 4.61 4.7 4.79 5 130 2 1 MM1Z5V1BW N4 5 5.1 5.20 5 130 2 1.5 MM1Z5V6BW P4 5.49 5.6 5.71 5 80 1 2.5 MM1Z6V2BW R4 6.08 6.2 6.32 5 50 1 3 MM1Z6V8BW X4 6.66 6.8 6.94 5 30 0.5 3.5 MM1Z7V5BW Y4 7.35 7.5 7.65 5 30 0.5 4 MM1Z8V2BW Z4 8.04 8.2 8.36 5 30 0.5 5 MM1Z9V1BW A5 8.92 9.1 9.28 5 30 0.5 6 MM1Z10BW B5 9.8 10 10.2 5 30 0.1 7 MM1Z11BW C5 10.78 11 11.22 5 30 0.1 8 MM1Z12BW D5 11.76 12 12.24 5 35 0.1 9 MM1Z13BW E5 12.74 13 13.26 5 35 0.1 10 MM1Z15BW F5 14.7 15 15.3 5 40 0.1 11 MM1Z16BW H5 15.68 16 16.32 5 40 0.1 12 MM1Z18BW J5 17.64 18 18.36 5 45 0.1 13 MM1Z20BW K5 19.6 20 20.4 5 50 0.1 15 MM1Z22BW M5 21.56 22 22.44 5 55 0.1 17 MM1Z24BW N5 23.52 24 24.48 5 60 0.1 19 MM1Z27BW P5 26.46 27 27.54 5 70 0.1 21 MM1Z30BW R5 29.4 30 30.6 5 80 0.1 23 MM1Z33BW X5 32.34 33 33.66 5 80 0.1 25 MM1Z36BW Y5 35.28 36 36.72 5 90 0.1 27 MM1Z39BW Z5 38.22 39 39.78 2.5 100 2 30 MM1Z43BW A6 42.14 43 43.86 2.5 130 2 33 MM1Z47BW B6 46.06 47 47.94 2.5 150 2 36 MM1Z51BW C6 49.98 51 52.02 2.5 180 1 39 MM1Z56BW D6 54.88 56 57.12 2.5 180 1 43 MM1Z62BW E6 60.76 62 63.24 2.5 200 0.2 47 MM1Z68BW F6 66.64 68 69.36 2.5 250 0.2 52 MM1Z75BW H6 73.5 75 76.5 2.5 300 0.2 57 Note: 1. VZT is tested with 20ms pulse. www.pingjingsemi.com Revision：4.0 May-2022 2/4 MM1Z2V0BW~MM1Z75BW Silicon Planar Zener Diodes Transient Thermal Impedance(℃/W) Typical Characteristic Curves Power Dissipation ( W ) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 25 75 50 100 125 150 175 2000 1000 100 10 0.01 0.1 T A , Temperature (°C) 100 10 t, Pulse Duration（sec） 10 30 25 27V 3.3V 4.7V 5.6V I ZT Zener current(mA) 2.4V I ZT Zener current(mA) 1 7.5V 10V 20 12V 15V 18V 15 20V 10 5 0.0 33V 43V 8 51V 62V 75V 6 4 2 0.0 4 2 6 8 10 12 14 16 18 20 22 24 Vz,Zener voltage(V) 10 20 30 40 50 60 70 80 Vz,Zener voltage(V) Leakage current (uA) 100 10 1.0 +125℃ 0.1 0.01 +25℃ 0.001 0.0001 0 10 20 30 40 50 60 70 80 Nominal zener voltage, V www.pingjingsemi.com Revision：4.0 May-2022 3/4 MM1Z2V0BW~MM1Z75BW Silicon Planar Zener Diodes Package Outline SOD-123W Dimensions in mm A D b E A1 C ∠ALL ROUND L1 E1 A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT mm mil www.pingjingsemi.com Revision：4.0 May-2022 8 ∠ 9° 4/4