SS14F-PJ

SS12F-PJ~SS120F-PJ Schottky Barrier Diode Features SMAF  Low power loss, high efficiency  For surface mounted applications 1  High forward surge current capability 2 2.Anode 1.Cathode Marking Code : SS12F-PJ : SS12 SS14F-PJ : SS14 SS16F-PJ : SS16 SS18F-PJ : SS18 SS110F-PJ : SS110 SS112F-PJ : SS112 SS115F-PJ : SS115 SS120F-PJ : SS120 Absolute Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol SS12F-PJ SS14F-PJ Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS Voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current IF(AV) 1.0 A IFSM 50 A SS16F-PJ SS18F-PJ SS110F-PJ SS112F-PJ SS115F-PJ SS120F-PJ Unit Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage at 1 A VF 0.55 0.70 0.85 0.90 V 0.3 0.2 0.1 mA 10 5 2 Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25 °C IR TA = 100 °C Typical Junction Capacitance Note1 Cj Typical Thermal Resistance Note2 RθJA 95 °C/W TJ -55 to +125 °C TSTG -55 to +150 °C Operating Junction Temperature Range Storage Temperature Range 80 110 pF Note: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C 2. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. www.pingjingsemi.com Revision：1.0 Aug-2022 1/3 SS12F-PJ~SS120F-PJ Schottky Barrier Diode Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Typical Characteristic Curves 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 40 60 80 100 500 20 10 1.0 SS12F-PJ/SS14F-PJ SS16F-PJ SS18F-PJ/SS112F-PJ SS115F-PJ/SS120F-PJ 0.1 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 SS12F-PJ/SS14F-PJ 20 SS16F-PJ-SS120F-PJ 10 1.8 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 Number of Cycles at 60Hz www.pingjingsemi.com Revision：1.0 Aug-2022 100 Transient Thermal Impedance（°C/W） 20 10 100 10 Reverse Voltage (V) 25 1 1 0.1 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 20 Percent of Rated Peak Reverse Voltage（%） Junction Capacitance (pF) Instaneous Forward Current (A) Case Temperature (°C) 1000 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） 2/3 SS12F-PJ~SS120F-PJ Schottky Barrier Diode Package Outline SMAF Dimensions in mm ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil www.pingjingsemi.com Revision：1.0 Aug-2022 Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad HE ∠ 7° 3/3