RB551V-30

RB551V-30 Schottky Barrier Diode SOD-323 Features  High current capability  Low forward voltage drop 2  Low power loss, high efficiency  Guarding for overvoltage protection 1  Metal silicon junction, majority carrier conduction 1.Cathode 2.Anode Marking Code : D Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbols RB551V-30 Units VRRM 30 V DC Reverse Voltage VR 30 V Maximum Average Forward Current at TA=25°C IO 0.5 A Power Dissipation PD 200 mW IR 100 uA IFSM 25 A VF 0.36 V Maximum Repetitive Peak Reverse Voltage Reverse Leakage Current at VR=20V Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC method) Maximum Forward Voltage at IF=100 mA at IF=500 mA 0.47 Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range TSTG -55 to +125 °C www.pingjingsemi.com Revision：2.0 Jul-2021 1/3 RB551V-30 Schottky Barrier Diode 0.6 Instaneous Reverse Current (μA) Average Forward Current (A) Typical Characteristic Curves 0.5 0.4 0.3 0.2 0.1 0.0 50 25 75 100 125 150 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 20 40 60 80 100 100 Junction Capacitance (pF) 1.0 0° C 0.1 °C 25 0.01 0.001 0 0.2 0.4 0.6 0.8 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 10 3 Percent of Rated Peak Reverse Voltage（%） 10 Instaneous Forward Current (A) Case Temperature (°C) 10 4 10 0.1 1 10 100 Reverse Voltage (V) 36 30 24 18 12 06 00 8.3 ms Single Half Sine Wave (JEDEC Method) 1 10 100 Number of Cycles at 60Hz www.pingjingsemi.com Revision：2.0 Jul-2021 2/3 RB551V-30 Schottky Barrier Diode Package Outline SOD-323 Dimensions in mm E D b A C A1 ∠ALL ROUND L1 E1 A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT mm mil www.pingjingsemi.com Revision：2.0 Jul-2021 8 ∠ 9° 3/3