RB521S-30

RB521S-30 Schottky Barrier Diode SOD-523 Features  Low Forward Voltage Drop  Surface Mount Package Ideally Suited for 2 1 Automated Insertion  Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device 1.Cathode 2.Anode Marking Code : C Absolute Maximum Ratings at TA = 25 ℃ (unless otherwise specified) Parameter Symbols Value Unit VR 30 V IF 200 mA Non-Repetitive Peak Forward Surge Current at t = 8.3 s IFSM 1 A Power Dissipation PD 200 mW Junction Temperature TJ 125 °C TSTG -55 to +125 °C Reverse Voltage Forward Continuous Current Storage Temperature Range Characteristics at TA = 25 ℃ Parameter Symbols Min. Typ. Max. Unit VF -- -- 0.37 V -- -- 0.60 VR(BR) 30 -- -- V IR -- -- 5 µA Forward Voltage at IF = 20 mA at IF = 200 mA Reverse Breakdown Voltage at IR = 500 µA Reverse Current at VR = 10 V www.pingjingsemi.com Revision：2.0 Mar-2022 1/3 RB521S-30 Schottky Barrier Diode Power Dissipation PD (mW) 250 200 150 100 50 0 25 75 50 100 125 150 175 Ambient Temperature T a (°C) Ins taneous Reverse Current (uA) Typical Characteristic Curves 100 10 1 0.1 0.01 T a =25°C 0 5 10 15 20 25 30 35 40 Instaneous Reverse Voltage (V) Forward Current IF (mA) 200 100 10 =2 Ta C 5° 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage VF (V) www.pingjingsemi.com Revision：2.0 Mar-2022 2/3 RB521S-30 Schottky Barrier Diode Package Outline SOD-523 Dimensions in mm ∠ALL ROUND A C A P E HE N Bottom View L A e C D E HE N L P max 0.77 0.35 0.15 1.30 0.99 1.70 min 0.51 0.25 0.08 1.10 0.75 1.50 0.35 ref 0.2 ref R0.1 ALL ROUND max 30 14 6 51 39 67 min 20 10 3 43 30 59 8.0 ref R4.0 ALL ROUND UNIT mm mil N e E D www.pingjingsemi.com Revision：2.0 Mar-2022 14 ref ∠ 10°±1° 3/3