RB520S-30

RB520S-30 Schottky Barrier Diode SOD-523 Features  Low Forward Voltage Drop  Matte Tin(Sn) Lead Finish  Flat Lead SOD-523 Small Outline Plastic Package 2 1 1.Cathode 2.Anode Marking Code : B Absolute Maximum Ratings at TA =25 ℃ Parameter Symbols Value Unit VR 30 V Average Rectified Output Current IF(AV) 200 mA Non-Repetitive Peak Forward Surge Current at t = 8.3 s IFSM 1 A Power Dissipation PD 200 mW Junction Temperature TJ 125 °C TSTG -55 to +150 °C DC Reverse Voltage Storage Temperature Range Characteristics at TA = 25 ℃ Parameter Reverse Breakdown Voltage at IR = 500 μA Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V www.pingjingsemi.com Revision：2.0 Oct-2021 Symbols Min. Typ. Max. Unit V(BR)R 30 -- -- V VF -- -- 0.6 V IR -- -- 1 µA 1/3 RB520S-30 Schottky Barrier Diode Typical Characteristic Curves 600 1000 100 100 o (uA) Ta =2 5 o C Reverse Current IR 10 Ta =1 00 Forward Current IF o C (mA) Ta=100 C 1 0.1 10 1 o Ta=25 C 0.1 0.01 0.01 0 100 200 300 400 Forward Voltage 500 VF 600 700 800 0 5 10 (mV) 15 Reverse Voltage 100 20 VR 25 30 (V) 200 150 PD (mW) 30 Power Dissipation Capacitance Between Terminals CT (pF) Ta=25℃ f=1MHz 10 3 1 100 50 0 0 5 10 Reverse Voltage www.pingjingsemi.com Revision：2.0 Oct-2021 15 VR (V) 20 0 25 50 Ambient Temperature 75 Ta 100 125 (℃) 2/3 RB520S-30 Schottky Barrier Diode Package Outline SOD-523 Dimensions in mm ALL ROUND C A ∠ HE A bp E D UNIT A bp C D E HE V ∠ mm 0.70 0.60 0.4 0.3 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 5 www.pingjingsemi.com Revision：2.0 Oct-2021 O 3/3