LL4148

LL4148 Silicon Epitaxial Planar Switching Diode Features LL-34  Fast switching diode in MiniMELF case especially suited for automatic surface mounting MiniMELF Dim Min. Max. A 3.30 3.60 B 1.40 1.50 C 0.25 0.33 All Dimension in mm Absolute Maximum Ratings at TA = 25 ℃ Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA Maximum Average Forward Rectified Current Non-repetitive Peak Forward Surge Current at t = 1 s IFSM at t = 1 ms at t = 1 µs Maximum Power Dissipation Junction Temperature Storage Temperature Range 0.5 1 A 4 Note1 PD 500 mW TJ 175 °C TSTG -65 to +175 °C Note1: Valid provided that electrodes are kept at ambient temperature. www.pingjingsemi.com Revision：2.0 Sep-2021 1/3 LL4148 Silicon Epitaxial Planar Switching Diode Characteristics at TA = 25 ℃ Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 10 mA Symbol Min. Max. Unit V(BR)R 100 -- V VF -- 1 V -- 25 nA -- 5 µA -- 50 µA CT -- 4 pF Vfr -- 2.5 V Trr -- 4 nS Peak Reverse Current at VR = 20 V at VR = 75 V IR at VR = 20 V,TJ=150°C Total Capacitance at VR = 0 V, f = 1 MHz Voltage Rise When Switching OnTested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time at IF = 10 mA to IR = 1 mA, Irr = 0.1 x IR ,VR = 6 V, RL = 100 Ω www.pingjingsemi.com Revision：2.0 Sep-2021 2/3 LL4148 Silicon Epitaxial Planar Switching Diode Typical Characteristic Curves 10 3 10 4 IR Reverse Current (nA) IF Forward Current (mA) 5 10 2 Tj=25℃ Tj=100 ℃ 10 1 10 -1 10 -2 2 10 3 5 2 10 2 5 2 10 5 VR=20V 2 0 1 VF Forward Voltage (V) 1 2 100 0 o 200 C TJ Junction Temperature (℃) Tj=25℃ 1.1 400 C Capacitance (pF) PD Power Dissipation (mW) 500 300 200 100 0 f=1MHz 1.0 0.9 0.8 0.7 0 0 25 100 150 Ta Ambient Temperature (℃) www.pingjingsemi.com Revision：2.0 Sep-2021 200 0 2 4 6 8 10 VR Reverse Voltage (V) 3/3