MMBD914

MMBD914 Silicon Epitaxial Planar Switching Diode SOT-23 Features  Low forward voltage  Fast reverse recovery time Equivalent Circuit 3.Cathode Marking Code : 5D 1.Anode 2.NC Absolute Maximum Ratings (TA=25℃) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current IF(AV) 200 mA Non-repetitive Peak Forward Surge Current (t = 1 μs) IFSM 4 A Power Dissipation PD 350 mW Junction Temperature TJ 150 °C TSTG -55 to +150 °C Storage Temperature Range Electrical Characteristics (TA=25℃) Parameter Forward Voltage at IF =10 mA Reverse Breakdown Voltage at IR = 100 µA Symbol Min. Max. Unit VF -- 1 V V(BR)R 100 -- V IR -- 25 nA -- 5 μA Cj -- 4 pF Trr -- 4 nS Reverse Current at VR = 20 V at VR = 75 V Typical Junction Capacitance at VR= 0 V, f= 1 MHz Maximum Reverse Recovery Time at IF = IR = 10 mA www.pingjingsemi.com Revision：2.0 Aug2022 1/3 MMBD914 Silicon Epitaxial Planar Switching Diode Instataneous Reverse Current Instataneous Forward Current IR IF (μA) (mA) Typical Characteristic Curves TJ (℃) Ambient Temperature Ta (℃) Instataneous Forward Voltage IF (mV) Power Dissipation PD (mW) Junction Temperature www.pingjingsemi.com Revision：2.0 Aug2022 2/3 MMBD914 Silicon Epitaxial Planar Switching Diode Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBD914 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Aug2022 3/3