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ES1D-PJ

ES1D-PJ

  • 厂商:

    PJ(平晶)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    快/超快二极管 SMA Vrrm=200V Vf=1V Ir=5μA

  • 数据手册
  • 价格&库存
ES1D-PJ 数据手册
ES1A-PJ~ES1J-PJ Surface Mount Superfast Recovery Rectifiers 60$ Features  For surface mount applications 2  Glass passivated chip junction  Superfast reverse recovery time 1 1.Cathode 2.Anode Marking Code: ES1A-PJ:ES1A ES1B-PJ:ES1B ES1C-PJ:ES1C ES1D-PJ:ES1D ES1E-PJ:ES1E ES1G-PJ:ES1G ES1J-PJ:ES1J Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols ES1A-PJ ES1B-PJ ES1C-PJ ES1D-PJ ES1E-PJ ES1G-PJ ES1J-PJ Units Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current IF(AV) 1.0 A IFSM 30 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load VF Maximum Instantaneous Forward Voltage at 1 A 1.0 1.25 1.70 V Maximum DC Reverse Current at Rated DC Blocking Voltage IR TA = 25°C TA = 125°C 5 μA 100 Cj 15 pF Typical Thermal Resistance Note2 RθJA 75 °C/W Maximum Reverse Recovery Time Note3 Trr 35 nS Junction Temperature TJ 150 °C TSTG -55 to +150 °C Typical Junction Capacitance Note1 Storage Temperature Range Note: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C 2. P.C.B. mounted with 1.0" X 1.0" (2.54 X 2.54 cm) copper pad areas. 3. Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A www.pingjingsemi.com Revision:2.0 Jun-2021 1/3 ES1A-PJ~ES1J-PJ Surface Mount Superfast Recovery Rectifiers Typical Characteristic Curves 10 ohm Noninductive 50 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 10ns/div Set time Base for 10ns/div 300 1.2 1.0 I R - Reverse Current (μA) Average Forward Current (A) Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 0.8 0.6 0.4 0.2 Single phase half wave resistive or inductive 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 10 1.0 ES1A-PJ~ES1D-PJ ES1E-PJ/ES1G-PJ 0.1 ES1J-PJ 0.01 0.001 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 80 60 100 30 T J =25°C 0 40 20 % of PIV.VOLTS Junction Capacitance (pF) Instaneous Forward Current (A) Case Temperature (°C) 25 20 15 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 05 0.1 1 10 100 Reverse Voltage (V) 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles www.pingjingsemi.com Revision:2.0 Jun-2021 2/3 ES1A-PJ~ES1J-PJ Surface Mount Superfast Recovery Rectifiers Package Outline SMA A A Dimensions in mm c a VM HE e A g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil www.pingjingsemi.com Revision:2.0 Jun-2021 g e A D a 0.3 12 3/3
ES1D-PJ 价格&库存

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