1N4148WT

1N4148WT Silicon Epitaxial Planar Switching Diode SOD-523 Features  High conductance 2 1  Fast switching speed T4  Ultra-small surface mount package  For general purpose switching applications 1.Cathode 2.Anode Marking Code : T4 Absolute Maximum Ratings (TA=25 °C) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 125 mA IFM 250 mA IFSM 2 A Maximum Average Forward Rectified Current Forward Continuous Current Non-repetitive Peak Forward Surge Current at t = 1 µs at t = 100 µs 1 Maximum Power Dissipation Thermal Resistance Junction to Ambient Air Operating Temperature Range Storage Temperature Range PD 150 mW RθJA 833 °C/W TJ -65 to +150 °C TSTG -65 to +150 °C Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit V(BR)R 75 -- V -- 0.715 -- 0.855 at IF = 50 mA -- 1 at IF = 150 mA -- 1.25 -- 1 µA -- 25 nA at VR = 75 V,TJ=150°C -- 50 µA at VR = 25 V,TJ=150°C -- 30 µA CT -- 2 pF Trr -- 4 nS Reverse Breakdown Voltage at IR = 1 µA Forward Voltage at IF = 1 mA at IF = 10 mA VF V Peak Reverse Current at VR = 75 V at VR = 20 V Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω www.pingjingsemi.com Revision：2.0 Mar-2020 IR 1/3 1N4148WT Silicon Epitaxial Planar Switching Diode PD Total Power Dissipation (mW) IF Instaneous Forward Current (A) Typical Characteristic Curves VF Instaneous Forward Voltage (V) CT Total Capacitance (pF) IR Instaneous Reverse Current (mA) TA Ambient Temperature (°C) VR Instaneous Reverse Voltage (V) www.pingjingsemi.com Revision：2.0 Mar-2020 VR Reverse Voltage (V) 2/3 1N4148WT Silicon Epitaxial Planar Switching Diode Package Outline SOD-523 Dimensions in mm ALL ROUND C A ∠ HE A bp E D UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 www.pingjingsemi.com Revision：2.0 Mar-2020 ∠ 5 O 3/3