ES1DF-PJ

ES1AF-PJ~ES1JF-PJ Surface Mount Superfast Recovery Rectifiers Features SMAF  For surface mount applications  Glass passivated chip junction 1  Superfast reverse recovery time 2 2.Anode 1.Cathode Marking Code： ES1AF-PJ：ES1A ES1BF-PJ：ES1B ES1CF-PJ：ES1C ES1DF-PJ：ES1D ES1EF-PJ：ES1E ES1GF-PJ：ES1G ES1JF-PJ：ES1J Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols ES1AF-PJ ES1BF-PJ ES1CF-PJ ES1DF-PJ ES1EF-PJ ES1GF-PJ ES1JF-PJ Units Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at TC =125°C Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Instantaneous Forward Voltage at 1 A IF(AV) 1.0 A IFSM 30 A VF 1.0 1.25 1.68 V Maximum DC Reverse Current at Rated DC Blocking Voltage IR TA = 25°C TA = 125°C 5 μA 100 Cj 15 pF Typical Thermal Resistance Note2 RθJA 80 °C/W Maximum Reverse Recovery Time Note3 Trr 35 nS Junction Temperature TJ 150 °C TSTG -55 to +150 °C Typical Junction Capacitance Note1 Storage Temperature Range Note: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C 2. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 3. Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A www.pingjingsemi.com Revision：2.0 Jun-2021 1/3 ES1AF-PJ~ES1JF-PJ Surface Mount Superfast Recovery Rectifiers Typical Characteristic Curves t rr 10 ohm Noninductive 50 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx - 0 -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div 300 Average Forward Current (A) 1.2 IR- Reverse Current (μA) 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 100 T J =125 °C 10 T J =75 °C 1.0 T J =25 °C 0.1 175 20 0 10 ES1AF-PJ~ES1DF-PJ ES1EF-PJ/ES1GF-PJ 0.1 ES1JF-PJ 0.01 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) Peak Forward Surge Current (A) 80 100 100 T J =25 °C 1.0 0.001 60 % of PIV.VOLTS Junction Capacitance (pF) Instaneous Forward Current (A) Case Temperature (°C) 40 10 1 T= J 25 °C f = 1.0MHz V sig = 50mV p-p 0.1 1.0 10 100 Reverse Voltage (V) 35 30 25 20 15 10 05 00 8.3 ms Single Half Sine Wave Wave (JEDEC Method) 1 10 100 Number of Cycles www.pingjingsemi.com Revision：2.0 Jun-2021 2/3 ES1AF-PJ~ES1JF-PJ Surface Mount Superfast Recovery Rectifiers Package Outline SMAF Dimensions in mm ∠ALL ROUND C A ∠ALL ROUND V M D E A g Top View mil www.pingjingsemi.com Revision：2.0 Jun-2021 Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad HE ∠ 7° 3/3