1SS355WB

1SS355WB Silicon Epitaxial Planar Switching Diode SOD-323W Features  For surface mount applications  High Speed :t=1.2ns Typ. 2  High speed switching  High reliability with high surge current handing capability 1 1.Cathode 2.Anode Marking Code：A Absolute Maximum Ratings at TA = 25 ℃ Parameter Symbol 1SS355WB Unit Non-Repetitive Peak Reverse Voltage VRM 90 V DC Reverse Voltage VR 80 V Peak Forward Current IFM 225 mA Average Rectified Output Current IO 100 mA Isurge 500 mA TJ 125 °C TSTG -55 to +125 °C Symbol 1SS355WB Unit VF 1.2 V IR 0.1 µA CT 3 pF Trr 4 nS Surge Current (1s) Operating Temperature Storage Temperature Range Characteristics at TA = 25 ℃ Parameter Forward Voltage IF = 100 mA Reverse Current VR = 80 V Capacitance Between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 Ω www.pingjingsemi.com Revision：2.0 Jul-2021 1/3 1SS355WB Silicon Epitaxial Planar Switching Diode Typical Characteristic Curves Reverse Current (uA) 2 5° C Ta = 10 Ta = 12 7 5° C 5°C 100 Ta = Instaneous Forward Current (mA) 100 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Junction Capacitance (pF) Instaneous Forward Voltage (V) 10 10 T a =75°C 1 T a =25°C 0.1 0.01 0 20 40 60 80 100 Reverse Voltage VR （V） T J =25°C f=1MHz 1.0 0.1 0.1 1.0 10 20 Reverse Voltage (V) www.pingjingsemi.com Revision：2.0 Jul-2021 2/3 1SS355WB Silicon Epitaxial Planar Switching Diode Package Outline SOD-323W Dimensions in mm E D b A C A1 ∠ALL ROUND L1 E1 A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT mm mil www.pingjingsemi.com Revision：2.0 Jul-2021 8 ∠ 9° 3/3