BAV21WS

BAV19WS~BAV21WS Silicon Epitaxial Planar Switching Diode SOD-323 Features  For surface mount applications  Glass passivated chip junction 2  Low profile package  Fast reverse recovery time 1  Lead free in comply with EU RoHS 2011/65/EU directive 1.Cathode 2.Anode Marking Code： BAV19WS：A8 BAV20WS：T2 BAV21WS：T3 Absolute Maximum Ratings at TA = 25 ℃ Parameter Maximum Repetitive Peak Reverse Voltage Symbol BAV19WS BAV20WS Maximum RMS Voltage VRRM 200 250 BAV19WS 100 VRMS BAV21WS Continuous Forward Current Repetitive Peak Forward Current 150 V V 200 IF 250 mA IFRM 625 mA at t =1 s at t =1 ms Unit 120 BAV21WS BAV20WS Non-repetitive Peak Forward Surge Current Value 1 IFSM at t =1 μs 3 A 9 Power Dissipation PD 500 mW Junction Temperature TJ 500 °C TSTG -55 to +150 °C Storage Temperature Range www.pingjingsemi.com Revision：2.0 Jun-2021 1/4 BAV19WS~BAV21WS Silicon Epitaxial Planar Switching Diode Characteristics at TA = 25 ℃ Parameter Symbol Reverse Breakdown Voltage BAV19WS at IR = 100 µA BAV20WS Min. Max. 120 -- 200 -- 250 -- -- 1 -- 1.25 -- 0.1 -- 100 Cj -- 5 pF Trr -- 50 nS V(BR)R BAV21WS Unit V Maximum Forward Voltage at IF =100 mA VF at IF =200 mA V Maximum DC Reverse Current at Rated DC Blocking Voltage at TA =25 °C IR at TA =150 °C Typical Junction Capacitance at VR= 4 V, f= 1 MHz Maximum Reverse Recovery Time at IF= 0.5 A, Irr= 0.25A, IR= 1A www.pingjingsemi.com Revision：2.0 Jun-2021 μA 2/4 BAV19WS~BAV21WS Silicon Epitaxial Planar Switching Diode Instaneous Reverse Current (μA) Total Power Dissipation (mW) Typical Characteristic Curves 600 500 400 300 200 100 0.0 25 75 50 100 125 150 100 T J =150°C 10 1 0.1 T J =25°C 0.01 175 00 60 80 100 1.0 Junction Capacitance (pF) Instaneous Forward Current (A) 40 0.1 T J =25°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instaneous Forward Voltage (V) www.pingjingsemi.com Revision：2.0 Jun-2021 100 120 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) 0.01 0.0 20 1.6 T J =25°C 10 1 0.1 1.0 10 100 Reverse Voltage (V) 3/4 BAV19W~BAV21W Silicon Epitaxial Planar Switching Diode Package Outline SOD-323 Dimensions in mm E D b A C A1 ∠ALL ROUND L1 E1 A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT mm mil www.pingjingsemi.com Revision：2.0 Jun-2021 8 ∠ 9° 4/4