PJM2300NSA-L

PJM2300NSA-L N-Channel Enhancement Mode Power MOSFET Features SOT-23 ⚫ Excellent RDS(ON) and Low Gate Charge ⚫ VDS= 20V,ID= 5.5A RDS(on)< 28mΩ @VGS= 4.5V 1. Gate 2.Source 3.Drain Marking Code:M02L Applications Schematic Diagram 3.Drain ⚫ DC/DC Converter ⚫ Load Switch for Portable Devices 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5.5 A Drain Current-Pulsed Note1 IDM 18 A Maximum Power Dissipation PD 1 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ RθJA 125 ℃/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 May-2021 1/7 PJM2300NSA-L N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 0.45 -- 1 V Drain-Source On-Resistance Note3 RDS(on) VGS=4.5V, ID=4A -- 18 28 mΩ VGS=2.5V, ID=3A -- 22 35 mΩ VDS=5V,ID=3A -- 8 -- S -- 300 -- pF -- 120 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 80 -- pF Turn-on Delay Time td(on) -- 10 -- nS Turn-on Rise Time tr VDD=10V, VGS=4.5V -- 50 -- nS Turn-off Delay Time td(off) ID =3A, RGEN=6Ω -- 17 -- nS -- 10 -- nS -- 4.0 -- nC -- 0.65 -- nC -- 1.2 -- nC -- -- 1.2 V -- -- 5.5 A VDS=10V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =10V,VGS =4.5V ID =4A Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=5.5A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse width≤300μs, duty cycle≤2% www.pingjingsemi.com Revision：1.0 May-2021 2/7 PJM2300NSA-L N-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves 70 RDS(on) On-Resistance(mΩ) ID Drain Current (A) 4.5V 2V 3V 2.5V VGS=1.5V 55 40 VGS=2.5V 25 10 VGS=4.5V 0 VDS Drain-Source Voltage (V) 12 ID Drain Current (A) Normalized On-Resistance VGS=5V ID Drain Current (A) 8 4 125℃ 25℃ VGS Gate-Source Voltage (V) VGS=5V TJ Junction Temperature (℃) 70 C Capacitance (pF) RDS(on) On-Resistance(mΩ) 80 ID=4A 60 50 40 125℃ 30 20 25℃ 10 0 0 2 4 Revision：1.0 May-2021 Coss Crss 6 VGS Gate-Source Voltage (V) www.pingjingsemi.com Ciss 8 VDS Drain-Source Voltage (V) 3/7 VDS=10V ID=4A Qg Gate Charge (nC) www.pingjingsemi.com Revision：1.0 May-2021 Is Reverse Drain Current (A) VGS Gate-Source Voltage (V) PJM2300NSA-L N-Channel Enhancement Mode Power MOSFET 125℃ 25℃ VSD Source-Drain Voltage (V) 4/7 PJM2300NSA-L N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM2300NSA-L SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：1.0 May-2021 5/7 PJM2300NSA-L N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 May-2021 6/7 PJM2300NSA-L N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：1.0 May-2021 7/7