FMMT493

FMMT493 NPN Transistor SOT-23 Features  For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : 493 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Maximum Power Dissipation PD 250 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Sep-2021 1/6 FMMT493 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 100 -- 100 300 at VCE = 10 V, IC = 500 mA 60 -- at VCE = 10 V, IC = 1 A 20 -- ICBO -- 100 nA IEBO -- 100 nA V(BR)CBO 120 -- V V(BR)CEO 100 -- V V(BR)EBO 5 -- V VCE(sat) -- 300 mV -- 600 VBE(sat) -- 1.15 V VBE(on) -- 1 V FT 150 -- MHz Cob -- 10 pF DC Current Gain Note1 at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 250 mA Collector Base Cutoff Current at VCB = 100V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 μA HFE -- Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA at IC = 1 A, IB = 100 mA Base Emitter Saturation Voltage at IC = 1 A, IB = 100 mA Base Emitter On Voltage at VCE = 10 V, IC = 1 A Transition Frequency at VCE = 10 V, IC = 50 mA,f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revision：2.0 Sep-2021 2/6 FMMT493 NPN Transistor Typical Characteristic Curves 8 400 VCE= 10V o Ta=100 C hFE 27uA 24uA DC Current Gain Collector Current 350 30uA 6 IC (mA) Common Emitter Ta=25℃ 21uA 4 18uA 15uA 12uA 2 300 250 200 o Ta=25 C 9uA 150 6uA IB=3uA 0 100 0 2 4 6 8 10 Collector-Emitter Voltage 12 14 1 100 Collector Current 1000 IC 1000 (mA) 1000 β=10 β=10 Collector-Emitter Saturation Voltage VCEsat (mV) Base-Emitter Saturation Voltage VBEsat (mV) 10 VCE (V) 800 Ta=25℃ 600 400 Ta=100℃ 200 0.1 1 10 Collector Current 100 IC 100 Ta=100℃ Ta=25℃ 10 0.1 1000 1 10 100 Collector Current (mA) 180 IC 1000 (mA) 1000 (mA) 140 100 Ta=100℃ IC 120 100 Collector Current Transition Frequency fT (MHz) 160 80 60 40 Ta=25℃ 10 1 VCE=10V 20 VCE=10V o Ta=25 C 0 0 20 40 60 Collector Current IC 80 100 (mA) 0.1 100 200 300 400 500 600 Base-Emitter Voltage 700 800 900 1000 VBE (mV) 300 Power Dissipation PD (mW) 250 200 150 100 50 0 0 25 50 75 Ambient Temperature www.pingjingsemi.com Revision：2.0 Sep-2021 100 125 150 Ta (℃) 3/6 FMMT493 NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping FMMT493 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Sep-2021 4/6 FMMT493 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Sep-2021 5/6 FMMT493 NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Sep-2021 6/6