FMMT593

FMMT593 PNP Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : 593 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 100 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Maximum Power Dissipation PD 250 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 FMMT593 PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 100 -- 100 -- at VCE = -5 V, IC = -0.5 A 100 300 at VCE = -5 V, IC = -1 A 50 -- -ICBO -- 0.1 μA -ICES -- 0.1 μA -IEBO -- 0.1 μA -V(BR)CBO 120 -- V -V(BR)CEO 100 -- V -V(BR)EBO 5 -- V -VCE(sat) -- 0.2 V -- 0.3 -VBE(sat) -- 1.1 V -VBE(on) -- 1 V FT 150 -- MHz Cob -- 5 pF DC Current Gain at VCE = -5 V, IC = -1 mA at VCE = -5 V, IC = -250 mA Collector Base Cutoff Current at VCB = -100V Collector Emitter Cutoff Current at VCES = -100V Emitter Base Cutoff Current at VEB = -4 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -100 μA HFE -- Collector Emitter Saturation Voltage at IC = -250 mA, IB = -25 mA at IC = -500 mA, IB = -50 mA Base Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA Base Emitter On Voltage at VCE = -5 V, IC = -1m A Transition Frequency at VCE = -10 V, IC = -50 mA, f = 100 MHz Collector Output Capacitance at VCB = -10 V, f = 1 MHz www.pingjingsemi.com Revision：2.0 Mar-2021 2/6 FMMT593 PNP Transistor Typical Characteristic Curves -400 1000 Common Emitter Ta=25℃ -2.8mA -2.4mA -300 Ta=100℃ -250 hFE -2.0mA -1.6mA -200 DC Current Gain Collector Current IC (mA) -350 IB=-4.0、-3.6、-3.2mA -1.2mA -150 -0.8mA 100 Ta=25℃ -100 IB=-0.4mA -50 -0 VCE=-5V -0 -1 -2 -3 -4 -5 Collector-Emitter Volatge -6 VCE -7 10 -8 -1 -10 -100 Collector Current (V) -1000 IC -1000 (mA) -1000 Collector-Emitter Saturation Volatge VCEsat (mV) Base-Emitter Saturation Volatge VBEsat (mV) β=10 -800 Ta=25℃ -600 -400 Ta=100℃ -800 -600 -400 Ta=100℃ -200 β=10 -200 -1 -10 -100 Collector Current IC -0 -1000 Ta=25℃ -1 -10 -100 Collector Current (mA) IC -1000 (mA) 1000 -1000 f=1MHz IE=0 / IC=0 Ta=25℃ -800 (pF) -400 100 C IC -600 Collector Current (mA) Cib Capacitance Ta=100℃ Ta=25℃ 10 Cob -200 VCE=-5V -0 -200 -400 -600 -800 Base-Emitter Voltage 1 -0.1 -1000 VR -20 (V) 0.3 100 Power Dissipation PD (W) (MHz) fT -10 Reverse Volatge 120 Transition Frequency -1 VBE(mV) 80 60 40 20 0.2 0.1 VCE=-10V Ta=25℃ 0 -0 -20 -40 Collector Current www.pingjingsemi.com Revision：2.0 Mar-2021 -60 IC -80 (mA) -100 0.0 0 25 50 75 Ambient Temperature 100 Ta 125 150 (℃) 3/6 FMMT593 PNP Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping FMMT593 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 FMMT593 PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 FMMT593 PNP Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6