PTN102U02M5B10

Ultra-Low Capacitance Series ESD Protection PTN102U02M5B10 Features 100Watts peak pulse power (tp = 8/20μs) Tiny DFN1006 package Bidirectional configurations Solid-state silicon-avalanche technology Low clamping voltage Low leakage current Ro H S 2002/95/EC Low capacitance (Cj=0.2pF typ.) IEC COMPATIBILITY (EN61000-4) DFN1006 IEC 61000-4-2 ±10kV contact ±15kV air IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 5A (8/20μs) Applications Mechanical Characteristics Cell Phone Handsets and Accessories DFN1006 package Microprocessor based equipment Molding compound flammability rating: Personal Digital Assistants (PDA’s) UL 94V-0 Notebooks, Desktops, and Servers Packaging: Tape and Reel Portable Instrumentation RoHS/WEEE Compliant Schematic & PIN Configuration DFN1006 Specifications are subject to change without notice. C PROSEMI Document No:PG0217202M 1 ｏｆ　４ www.prosemitech.com Ultra-Low Capacitance Series ESD Protection PTN102U02M5B10 Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 100 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 5 A VESD 15 10 kV ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Min Typical VRWM VBR IT=1mA Reverse Leakage Current IR VRWM=5V,T=25℃ Peak Pulse Current IPP tp =8/20μs Clamping Voltage VC IPP=5A,tp=8/20μs Junction Capacitance Cj VR = 0V, f = 1MHz 6.0 Max Units 5.0 V 7.5 V 0.1 0.2 0.5 μA 5 A 20.5 V 0.26 pF Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM IT IR I IT R VRWM VBR VC V Breakdown Voltage @ IT Test Current IPP Note:. 8/20μs pulse waveform. Specifications are subject to change without notice. C PROSEMI Document No:PG0217202M 2　ｏｆ　４ www.prosemitech.com Ultra-Low Capacitance Series ESD Protection PTN102U02M5B10 Typical Characteristics Figure 2: Power Derating Curve 10 1 100w 8/20µs waveform 0.1 0.01 0.1 1 10 110 Percent of Rated Power for Ipp Ppp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 100 90 80 70 60 50 40 30 20 10 0 1,000 100 25 0 td – Pulse Duration - µs Figure3: Pulse Waveform 110 Ipp 80 Percent 20 70 e 60 18 Clamping Voltage–VC (V) 90 -1 50 40 30 td=Ipp/2 20 16 14 12 10 Test Waveform Paramters tr=8µs td=20µs 8 6 4 10 0 2 0 5 10 15 Time (µs) 20 150 Figure 4: Clamping Voltage vs.Ipp Waveform Paramters tr=8µs td=20µs 100 125 50 Ambient Temperature - TA (℃) 25 30 0 1 2 3 4 5 6 Peak Pulse Current–IPP (A) Specifications are subject to change without notice. C PROSEMI Document No:PG0217202M 3　ｏｆ　４ www.prosemitech.com Ultra-Low Capacitance Series ESD Protection PTN102U02M5B10 Outline Drawing PACKAGE OUTLINE 5C D e h h SYM 2 1 L 2 A1 C A BOTTOM VIEW Ordering information Order code PTN102U02M5B10 Package DFN1006 L1 b E L1 1 Marking A A1 b C D e E L L1 h Base qty 10k MILIMETER MIN NOM MAX 0.45 0.50 0.55 0 0.02 0.05 0.45 0.50 0.55 0.12 0.15 0.18 0.95 1.00 1.05 0.65BSC 0.55 0.60 0.65 0.20 0.25 0.30 0.05REF 0.07 0.12 0.17 Delivery mode Tape and reel Specifications are subject to change without notice. C PROSEMI Document No:PG0217202M 4　ｏｆ　４ www.prosemitech.com