PTN102L10M12B12

Low Capacitance Series ESD Protection PTN102L10M12B12 Features 120Watts peak pulse power (tp = 8/20μs) Tiny DFN1006 package Bidirectional configurations Solid-state silicon-avalanche technology Low clamping voltage Low leakage current Pb lead-free RoHS 2002/95/EC DFN1006 IEC COMPATIBILITY (EN61000-4) IEC 61000-4-2 ±30kV contact ±30kV air IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 5A (8/20μs) Mechanical Characteristics Applications Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation DFN1006 package Molding compound flammability rating: UL 94V-0 Packaging: Tape and Reel RoHS/WEEE Compliant Schematic & PIN Configuration DFN1006 Specifications are subject to change without notice C PROSEMI Document No:PGA05346284M 1 of 4 www.prosemitech. com Low Capacitance Series ESD Protection PTN102L10M12B12 Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 120 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 5 A VESD 30 30 kV ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Min Typical VRWM VBR IT=1mA Reverse Leakage Current IR VRWM=12V,T=25℃ Peak Pulse Current IPP Clamping Voltage Junction Capacitance Max Units 12.0 V 13.3 V 0.1 0.5 μA tp =8/20μs 5 A VC IPP=5A,tp=8/20μs 24 V Cj VR = 0V, f = 1MHz 10 pF Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT VC VBR VRWM IR VF IT V Test Current IPP Note:. 8/20μs pulse waveform. Specifications are subject to change without notice C PROSEMI Document No:PGA05346284M ２　ｏｆ　４ www.prosemitech.com Low Capacitance Series ESD Protection PTN102L10M12B12 Typical Characteristics Figure 2: Power Derating Curve 10 110 1 120w 8/20µs aveform 0.1 0.01 0.1 1 100 10 100 Percent of Rated Power for Ipp Ppp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 90 80 70 60 50 40 30 20 10 0 1,000 0 25 td – Pulse Duration - µs Figure3: Pulse Waveform 125 150 40 Clamping Voltage–VC (V) 90 80 Ipp 100 45 Waveform Paramters tr=8µs td=20µs 100 Percent 75 Figure 4: Clamping Voltage vs.Ipp 110 70 e-1 60 50 Ambient Temperature - TA (℃) 50 40 30 td=Ipp/2 20 35 30 25 20 Test Waveform Paramters tr=8µs td=20µs 15 10 5 10 0 0 5 10 15 20 25 0 30 0 Time (µs) 1 2 3 4 5 6 Peak Pulse Current–IPP (A) Specifications are subject to change without notice C PROSEMI Document No:PGA05346284M 3 of 4 www.prosemitech. com Low Capacitance Series ESD Protection PTN102L10M12B12 Outline Drawing – DFN1006 SYMBOL MILLIMETER MIN NOM MAX A 0.45 0.50 0.55 A1 0.00 0.02 0.05 b 0.45 0.50 0.55 c 0.12 0.15 0.18 D 0.95 1.00 1.05 e 0.65BSC E 0.55 0.60 0.65 L 0.20 0.25 0.30 L1 h 0.05REF 0.07 0.12 0.17 Marking 12B Ordering information Order code Package Base qty Delivery mode PTN102L10M12B12 DFN1006 10k Tape and reel Specifications are subject to change without notice C PROSEMI Document No:PGA05346284M 4 of 4 www.prosemitech. com