PTN102U04M5B6

Ultra-Low Capacitance Series ESD Protection PTN102U04M5B6 Features 60Watts peak pulse power (tp = 8/20μs) Tiny DFN1006 package Bidirectional configurations Solid-state silicon-avalanche technology Low clamping voltage Low leakage current Low capacitance (Cj=0.4pF typ. IO to IO) Pb lead-free RoHS 2002/95/EC DFN1006 IEC COMPATIBILITY (EN61000-4) IEC 61000-4-2 ±20kV contact ±20kV air IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 3.5A (8/20μs) Mechanical Characteristics Applications DFN1006 package Molding compound flammability rating: UL 94V-0 Packaging: Tape and Reel RoHS/WEEE Compliant Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Schematic & PIN Configuration DFN1006 Specifications are subject to change without notice C PROSEMI Document No:PGA0892315M 1 of 4 www.prosemitech. com Ultra-Low Capacitance Series ESD Protection PTN102U04M5B6 Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 60 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 3.5 A VESD 20 20 kV ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Min Typical VRWM VBR IT=1mA Reverse Leakage Current IR VRWM=5V,T=25℃ Peak Pulse Current IPP Clamping Voltage Junction Capacitance 6.0 Max Units 5.0 V 8.0 V 0.1 0.5 μA tp =8/20μs 3.5 A VC IPP=3.5A,tp=8/20μs 15 V Cj IO to IO VR = 0V, f = 1MHz 0.5 pF 0.4 Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM IT IR I IT R VRWM VBR VC V Breakdown Voltage @ IT Test Current IPP Note:. 8/20μs pulse waveform. Specifications are subject to change without notice C PROSEMI Document No:PGA0892315M ２　ｏｆ　４ www.prosemitech.com Ultra-Low Capacitance Series ESD Protection PTN102U04M5B6 Typical Characteristics Figure 2: Power Derating Curve 110 10 Percent of Rated Power for Ipp Ppp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 1 60w 8/20µswaveform 0.1 0.01 0.1 1 10 90 80 70 60 50 40 30 20 10 0 1,000 100 100 0 25 td – Pulse Duration - µs Figure3: Pulse Waveform 80 Ipp 125 150 18 Clamping Voltage–VC (V) 90 Percent 100 20 Waveform Paramters tr=8µs td=20µs 100 70 e-1 50 40 30 td=Ipp/2 20 16 14 12 Test Waveform Paramters tr=8µs td=20µs 10 8 6 4 10 0 2 0 5 10 15 20 25 30 0 Time (µs) IPP (A) 75 Figure 4: Clamping Voltage vs.Ipp 110 60 50 Ambient Temperature - TA (℃) 1 2 3 4 5 6 Peak Pulse Current–IPP (A) Figure5: Positive Clamping voltage (TLP) Figure5: Negative Clamping voltage (TLP) 35 0 30 5 25 10 20 IPP (A) 15 Rdyn = 0.55 Ω 20 15 Rdyn = 0.55 Ω 10 25 5 30 0 -0.5 35 4.5 9.5 14.5 19.5 24.5 VCL (V) -24.5 -19.5 -14.5 -9.5 -4.5 0.5 VCL (V) Specifications are subject to change without notice C PROSEMI Document No:PGA0892315M 3 of 4 www.prosemitech. com Ultra-Low Capacitance Series ESD Protection PTN102U04M5B6 Outline Drawing – DFN1006 SYMBOL MILLIMETER MIN NOM MAX A 0.45 0.50 0.55 A1 0.00 0.02 0.05 b 0.45 0.50 0.55 c 0.12 0.15 0.18 D 0.95 1.00 1.05 e 0.65BSC E 0.55 0.60 0.65 L 0.20 0.25 0.30 0.05REF L1 h 0.07 0.12 0.17 Marking 5T Ordering information Order code Package Base qty Delivery mode PTN102U04M5B6 DFN1006 10k Tape and reel Specifications are subject to change without notice C PROSEMI Document No:PGA0892315M 4 of 4 www.prosemitech. com