PBSS4160V,115

PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 28 December 2022 Product data sheet 1. General description Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5160V 2. Features and benefits • • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 3. Applications • • • Major application segments: • Telecom infrastructure • Industrial Power management: • DC-to-DC conversion • Supply line switching Peripheral driver: • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 60 V IC collector current - - 1 A ICM peak collector current t = 1 ms or limited by Tj(max) - - 2 A RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA; Tamb = 25 °C - 200 250 mΩ [1] [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 C collector 2 C collector 3 B base 4 E emitter 5 C collector 1 6 C collector SOT666 6 5 Graphic symbol 4 C B 2 3 E sym123 6. Ordering information Table 3. Ordering information Type number Package PBSS4160V Name Description Version SOT666 plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body SOT666 7. Marking Table 4. Marking codes Type number Marking code PBSS4160V 41 PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 2 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector IC collector current ICM peak collector current IB base current IBM peak base current pulsed; tp ≤ 300 µs; δ ≤ 0.02 Ptot total power dissipation Tamb ≤ 25 °C - 5 V [1] - 0.9 A [2] - 1 A - 2 A - 300 mA t = 1 ms or limited by Tj(max) - 1 A [1] - 300 mW [2] - 500 mW Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 001aaa714 0.6 Ptot (W) (1) 0.4 (2) 0.2 0 2 0 40 80 120 160 Tamb (°C) (1) FR4 PCB; 1 cm collector mounting pad (2) FR4 PCB; standard footprint Fig. 1. Power derating curves PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 3 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) [1] [2] Conditions thermal resistance from in free air junction to ambient Min Typ Max Unit [1] - - 415 K/W [2] - - 250 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 001aaa715 103 Zth (K/W) (1) (2) (3) (4) (5) 102 (6) (7) (8) (9) 10 (10) 1 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 Mounted on FR4 PCB; standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig. 2. Transient thermal impedance as a function of pulse time; typical values PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 4 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 60 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 60 V; IE = 0 A; Tj = 150 °C - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA ICES collector-emitter cut-off VCE = 60 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA; Tamb = 25 °C 250 400 - VCE = 5 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 200 350 - VCE = 5 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 100 150 - IC = 100 mA; IB = 1 mA; Tamb = 25 °C - 90 110 mV IC = 500 mA; IB = 50 mA; Tamb = 25 °C - 110 140 mV IC = 1 A; IB = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - 200 250 mV IC = 1 A; IB = 100 mA; Tamb = 25 °C - 200 250 mΩ VCEsat collector-emitter saturation voltage RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation IC = 1 A; IB = 50 mA; Tamb = 25 °C voltage - 0.95 1.1 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A; Tamb = 25 °C - 0.82 0.9 V td delay time - 11 - ns tr rise time VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = -25 mA; Tamb = 25 °C - 78 - ns ton turn-on time - 90 - ns ts storage time - 340 - ns tf fall time - 160 - ns toff turn-off time - 500 - ns fT transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C 150 220 - MHz Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 5.5 10 pF PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 5 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor mle130 800 mle133 1.2 hFE VBE (V) 600 (1) (1) 0.8 (2) (2) 400 (3) 0.4 (3) 200 0 10- 1 1 10 102 0 10- 1 103 104 IC (mA) VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. 1 10 102 103 104 IC (mA) VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C DC current gain as a function of collector current; typical values Fig. 4. mle135 1 Base-emitter voltage as a function of collector current; typical values mle104 1 VCEsat (V) VCEsat (V) 10- 1 10- 1 (2) (1) 10- 2 (3) (1) (3) 10- 3 10- 1 1 10 102 10- 2 103 104 IC (mA) 10- 1 IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 5. Product data sheet 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb= 25 °C (3) Tamb = −55 °C Collector-emitter saturation voltage as a function of collector current; typical values PBSS4160V 1 (2) Fig. 6. Collector-emitter saturation voltage as a function of collector curret; typical values All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 6 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor mle129 1 mle134 1.2 VBEsat (V) VCEsat (V) (1) (2) 0.8 (3) (1) 10- 1 (2) 10- 2 10- 1 1 102 10 0.4 0 10- 1 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values mle131 2 (6) IC (A) (5) (4) (3) (2) 102 10 103 104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 Fig. 7. 1 Fig. 8. Base-emitter saturation voltage as a function of collector current; typical values mle132 103 (1) RCEsat (Ω) 1.6 102 (7) (8) 1.2 (9) 10 (10) 0.8 1 0.4 (1) (2) 0 0 1 2 3 4 VCE (V) 10- 1 10- 1 5 Tamb = 25 °C (1) IB = 60 mA (2) IB = 54 mA (3) IB = 48 mA (4) IB = 42 mA (5) IB = 36 mA (6) IB = 30 mA (7) IB = 24 mA (8) IB = 18 mA (9) IB = 12 mA (10) IB = 6 mA Fig. 9. 1 10 (3) 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 10. Equivalent on-resistance as a function of collector current; typical values Collector current as a function of collectoremitter voltage; typical values PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 7 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 11. Switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 12. Test circuit for switching times PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 8 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor 12. Package outline 1.7 1.5 6 0.6 0.5 5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 1 2 3 0.18 0.08 0.27 0.17 0.5 1 Dimensions in mm 04-11-08 Fig. 13. Package outline SOT666 13. Soldering 2.75 2.45 2.1 1.6 0.538 2 1.7 1.075 0.4 (6×) 0.25 (2×) 0.55 (2×) solder lands 0.3 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) Dimensions in mm sot666_fr Fig. 14. Reflow soldering footprint for SOT666 PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 9 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS4160V v.4 20221228 Product data sheet - PBSS4160V_3 Modifications: • • • • The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. Legal texts have been adapted to the new company name where appropriate. Packing information removed. Product(s) changed to non-automotive qualification. PBSS4160V_3 20091211 Product data sheet - PBSS4160V_2 PBSS4160V_2 20050131 Product data sheet - PBSS4160V_1 PBSS4160V_1 20040423 Objective data sheet - - PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 10 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor 15. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 11 / 12 PBSS4160V Nexperia 60 V, 1 A NPN low VCEsat (BISS) transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information.......................................................... 8 12. Package outline.......................................................... 9 13. Soldering..................................................................... 9 14. Revision history........................................................10 15. Legal information......................................................11 © Nexperia B.V. 2022. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 28 December 2022 PBSS4160V Product data sheet All information provided in this document is subject to legal disclaimers. 28 December 2022 © Nexperia B.V. 2022. All rights reserved 12 / 12