PBSM5240PF,115

PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Loadswitch „ Power management „ Power switches (e.g. motors, fans) „ Battery-driven devices „ Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - −40 V PNP low VCEsat (BISS) transistor VCEO collector-emitter voltage open base [1] - −1.8 A [1][5] - - −2 A IC collector current ICRM repetitive peak collector current ICM peak collector current single pulse; tp ≤ 1 ms [1] - - −3 A collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [2] - 240 340 mΩ RCEsat PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit - - 30 V N-channel Trench MOSFET VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage Tamb = 25 °C ID drain current RDSon drain-source on-state resistance - - ±8 V Tamb = 25 °C; VGS = 10 V [3] - - 0.66 A Tj = 25 °C; VGS = 4.5 V; ID = 0.2 A [4] - 370 580 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [4] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. [5] Pulse test: tp ≤ 20 ms; δ ≤ 0.10. 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 base 3 drain 4 source 5 gate 6 collector 7 collector 8 drain Simplified outline 6 5 7 1 Graphic symbol 4 6, 7 5 4 1 2 3, 8 8 2 3 Transparent top view 017aaa079 3. Ordering information Table 3. Ordering information Type number PBSM5240PF Package Name Description Version HUSON6 plastic thermal enhanced ultra thin small outline SOT1118 package; no leads; 6 terminals; body 2 × 2 × 0.65 mm 4. Marking Table 4. PBSM5240PF Product data sheet Marking codes Type number Marking code PBSM5240PF 1G All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 2 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PNP low VCEsat (BISS) transistor VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector collector current IC - −5 V [1] - −1.8 A [1][4] - −2 A [1] - −3 A [1] ICRM repetitive peak collector current ICM peak collector current IB base current - −300 mA IBM peak base current single pulse; tp ≤ 1 ms [1] - −1 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 1.1 W [2] - 1.25 W single pulse; tp ≤ 1 ms N-channel Trench MOSFET VDS drain-source voltage Tamb = 25 °C - 30 V VDG drain-gate voltage Tamb = 25 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage Tamb = 25 °C - ±8 V - 660 mA drain current ID VGS = 10 V [3] Tamb = 25 °C Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs Ptot total power dissipation Tamb = 25 °C [3] - 420 mA - 3.56 A - 760 mW - 660 mA Source-drain diode source current IS Tamb = 25 °C Per device PBSM5240PF Product data sheet Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [4] Pulse test: tp ≤ 20 ms; δ ≤ 0.10. All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 3 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 006aac608 1.4 Ptot (W) 1.2 (1) (2) 1.0 (3) 0.8 0.6 (4) 0.4 0.2 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 (3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 (4) FR4 PCB, single-sided copper, standard footprint Fig 1. BISS transistor: Power derating curves 03aa17 120 03aa25 120 Pder (%) Ider (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 Tsp (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 2. ID I der = -------------------- × 100 % I D ( 25°C ) MOSFET: Normalized total power dissipation as a function of solder point temperature PBSM5240PF Product data sheet 200 Tsp (°C) Fig 3. MOSFET: Normalized continuous drain current as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 4 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 006aac609 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) (3) 10–1 (4) (5) 10–2 10–1 1 10 102 VDS (V) IDM = single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. MOSFET: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PBSM5240PF Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 5 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - - 115 K/W [2] - - 100 K/W [3] - - 165 K/W PNP low VCEsat (BISS) transistor Rth(j-a) thermal resistance from junction to ambient in free air N-channel Trench MOSFET Rth(j-a) thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 006aac610 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0 1 10–5 0.01 10–4 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, standard footprint Fig 5. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSM5240PF Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 6 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 006aac611 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0 1 –5 10 0.01 10–4 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 Fig 6. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac612 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0 1 –5 10 0.01 10–4 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 Fig 7. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSM5240PF Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 7 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 006aac613 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0 1 –5 10 0.01 10–4 10–3 10–2 10–1 1 102 10 tp (s) 103 FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 Fig 8. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac614 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.1 0.25 0.2 10 0 1 10–3 0.05 0.02 0.01 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, mounting pad for drain 1 cm2 Fig 9. MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSM5240PF Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 8 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 7. Characteristics Table 7. Characteristics for PNP low VCEsat transistor Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −40 V; IE = 0 A - - −100 nA VCB = −40 V; IE = 0 A; Tj = 150 °C - - −50 μA ICEO collector-emitter cut-off VCE = −30 V; IB = 0 A current - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −5 V IC = −1 mA 300 - - IC = −100 mA 300 - 800 IC = −500 mA 200 - - [1] IC = −1 A VCEsat Product data sheet - - IC = −100 mA; IB = −1 mA - −85 −140 mV IC = −500 mA; IB = −50 mA [1] - −120 −170 mV IC = −1 A; IB = −100 mA [1] - −200 −310 mV IC = −500 mA; IB = −50 mA [1] - 240 340 mΩ [1] - - −1.1 V [1] - - −1 V RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation IC = −1 A; IB = −100 mA voltage VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz 150 - - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 12 pF [1] PBSM5240PF collector-emitter saturation voltage 140 [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 9 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 006aaa465 1200 hFE 800 −2.4 006aaa469 IC (A) IB (mA) = −24 −21.6 −19.2 −16.8 −14.4 −12 −9.6 −1.6 (1) −7.2 (2) −4.8 −0.8 400 −2.4 (3) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 0 VCEsat = −5 V −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 10. PNP transistor: DC current gain as a function of collector current; typical values 006aac615 –1.6 Fig 11. PNP transistor: Collector current as a function of collector-emitter voltage; typical values 006aaa468 −1.3 VBE (V) VBEsat (V) –1.2 −0.9 (1) (1) –0.8 (2) (2) –0.4 −0.5 (3) (3) –0.0 –10–1 –1 –10 –102 –103 –104 IC (mA) VCEsat = −5 V −0.1 −10−1 −1 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 12. PNP transistor: Base-emitter voltage as a function of collector current; typical values Product data sheet −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C PBSM5240PF −10 Fig 13. PNP transistor: Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 10 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 006aaa466 −1 006aaa471 −10 VCEsat (V) VCEsat (V) −1 −10−1 −10−1 (1) (2) (1) (2) −10−2 −10−1 −10−2 (3) −1 −10 −102 −103 −104 IC (mA) (3) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 14. PNP transistor: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa470 103 Fig 15. PNP transistor: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa472 103 RCEsat (Ω) RCEsat (Ω) 102 102 (1) 10 (2) 10 (3) 1 1 (1) (2) (3) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 16. PNP transistor: Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C PBSM5240PF −10 Fig 17. PNP transistor: Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 11 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module Table 8. Characteristics for N-channel Trench MOSFET Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 30 - - V 27 - - V Tj = 25 °C 0.45 0.7 0.95 V Tj = 150 °C 0.25 - - V Tj = −55 °C - - 1.15 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 100 μA - 10 ±100 nA Tj = 25 °C - 370 580 mΩ Tj = 150 °C - 663 985 mΩ VGS = 2.5 V; ID = 0.1 A - 440 690 mΩ VGS = 1.8 V; ID = 75 mA - 540 920 mΩ ID = 1 A; VDS = 15 V; VGS = 4.5 V - 0.89 - nC - 0.1 - nC - 0.2 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz - 43 - pF - 7.7 - pF - 4.8 - pF - 4.0 - ns - 7.5 - ns Static characteristics V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V voltage Tj = 25 °C Tj = −55 °C VGS(th) IDSS IGSS RDSon gate-source threshold voltage drain leakage current gate leakage current drain-source on-state resistance ID = 250 μA; VDS = VGS VDS = 30 V; VGS = 0 V VGS = ±8 V; VDS = 0 V VGS = 4.5 V; ID = 0.2 A [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 18 - ns tf fall time - 4.5 - ns - 0.76 1.2 V VDS = 15 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD [1] PBSM5240PF Product data sheet source-drain voltage IS = 0.3 A; VGS = 0 V Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 12 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 03an94 2.5 4.5 ID (A) 3 03am43 10−3 2.5 ID (A) 2 2 10−4 min typ max 1.5 1.8 1 10−5 VGS (V) = 1.5 0.5 10−6 0 0 0.5 1 1.5 VDS (V) 2 0 0.4 0.8 1.2 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V Fig 18. MOSFET: Output characteristics: drain current as a function of drain-source voltage; typical values 006aac616 1.0 Fig 19. MOSFET: Sub-threshold drain current as a function of gate-source voltage 03an96 2.5 ID (A) RDSon (Ω) 0.8 (1) 0.6 2 (2) 25 °C Tj = 150 °C 1.5 (3) (4) 0.4 1 (5) 0.2 0.5 0.0 0.0 0 0.5 1.0 1.5 2.0 ID (A) 0 2.5 Tj = 25 °C 1 2 3 VGS (V) 4 VDS > ID × RDSon (1) VGS = 1.8 V (2) VGS = 2.0 V (3) VGS = 2.5 V (4) VGS = 3.0 V (5) VGS = 4.5 V Fig 20. MOSFET: Drain-source on-state resistance as a function of drain current; typical values PBSM5240PF Product data sheet Fig 21. MOSFET: Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 13 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 006aac618 1.8 03aj65 1.2 VGS(th) (V) a 0.9 max 1.2 typ 0.6 min 0.6 0.3 0.0 –60 0 60 120 Tj (°C) 180 0 −60 0 60 120 180 Tj (°C) ID = 1 mA; VDS = VGS R DSon a = ----------------------------R DSon ( 25°C ) Fig 22. MOSFET: Normalized drain-source on-state resistance as a function of junction temperature; typical values 03an98 102 Fig 23. MOSFET: Gate-source threshold voltage as a function of junction temperature 03an99 5 ID = 1 A Tj = 25 °C VDS = 15 V VGS (V) C (pF) Ciss 4 3 10 Coss 2 Crss 1 1 10-1 1 10 VDS (V) 102 0 0 0.2 0.4 0.6 0.8 1 QG (nC) f = 1 MHz; VGS = 0 V Fig 24. MOSFET: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PBSM5240PF Product data sheet Fig 25. MOSFET: Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 14 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 03an97 1 VGS = 0 V IS (A) 0.8 VDS ID 0.6 VGS(pl) 0.4 VGS(th) VGS 0.2 QGS1 150 °C QGS2 QGS QGD QG(tot) Tj = 25 °C 0 0 0.2 0.4 0.6 0.8 1 VSD (V) 017aaa137 Fig 26. MOSFET: Gate charge waveform definitions Fig 27. MOSFET: Source current as a function of source-drain voltage; typical values 8. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig 28. Package outline SOT1118 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 PBSM5240PF SOT1118 [1] PBSM5240PF Product data sheet 4 mm pitch, 8 mm tape and reel -115 For further information and the availability of packing methods, see Section 13. All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 15 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.45 (6×) 0.72 (2×) 0.82 (2×) sot1118_fr Reflow soldering is the only recommended soldering method. Fig 29. Reflow soldering footprint SOT1118 PBSM5240PF Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 16 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSM5240PF v.2 20110420 Product data sheet - PBSM5240PF v.1 Modifications: PBSM5240PF v.1 PBSM5240PF Product data sheet • • • • • Section 1.1 “General description”: updated. Section 2 “Pinning information”: updated. Table 1, 5, 6, 7 and 8: updated according to the last measurements. Figure 1 to 27: added. Section 12 “Legal information”: updated. 20100825 Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 - © Nexperia B.V. 2017. All rights reserved 17 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Draft — The document is a draft version only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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All rights reserved 18 of 20 PBSM5240PF Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PBSM5240PF Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 © Nexperia B.V. 2017. All rights reserved 19 of 20 Nexperia PBSM5240PF 40 V, 2 A PNP BISS/Trench MOSFET module 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Packing information . . . . . . . . . . . . . . . . . . . . 15 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 20 April 2011