PESD12VS1UL,315

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESDxS1UL series Unidirectional ESD protection diodes Rev. 3 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra small Surface Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features and benefits      Ultra small SMD plastic package ESD protection of one line Max. peak pulse power: PPP = 150 W Low clamping voltage: VCL = 20 V AEC-Q101 qualified     Ultra low leakage current: IRM < 700 nA ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5; (surge); IPP up to 15 A 1.3 Applications  Computers and peripherals  Audio and video equipment  Parallel ports  Communication systems  High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Conditions Min Typ Max Unit PESD3V3S1UL - - 3.3 V PESD5V0S1UL - - 5.0 V PESD12VS1UL - - 12 V PESD15VS1UL - - 15 V - - 24 V PESD3V3S1UL - 207 300 pF PESD5V0S1UL - 152 200 pF PESD12VS1UL - 38 75 pF PESD15VS1UL - 32 70 pF PESD24VS1UL - 23 50 pF PESD24VS1UL Cd diode capacitance f = 1 MHz; VR = 0 V PESDxS1UL series NXP Semiconductors Unidirectional ESD protection diodes 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 1 2 2 sym035 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number PESD3V3S1UL Package Name Description - leadless ultra small plastic package; 2 terminals; SOD882 body 1.0  0.6  0.5 mm PESD5V0S1UL Version PESD12VS1UL PESD15VS1UL PESD24VS1UL 4. Marking Table 4. PESDXS1UL_SER Product data sheet Marking codes Type number Marking code PESD3V3S1UL G1 PESD5V0S1UL G2 PESD12VS1UL G3 PESD15VS1UL G4 PESD24VS1UL G5 All information provided in this document is subject to legal disclaimers. Rev. 3 — 25 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 PESDxS1UL series NXP Semiconductors Unidirectional ESD protection diodes 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions PPP peak pulse power tp = 8/20 s [1] Min Max Unit IPP peak pulse current tp = 8/20 s [1] - 150 W PESD3V3S1UL - 15 A PESD5V0S1UL - 15 A PESD12VS1UL - 5 A PESD15VS1UL - 5 A PESD24VS1UL - 3 A Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Table 6. ESD maximum ratings Symbol Parameter VESD Conditions Min Max Unit PESD3V3S1UL - 30 kV PESD5V0S1UL - 30 kV PESD12VS1UL - 30 kV PESD15VS1UL - 30 kV PESD24VS1UL - 23 kV - 10 kV electrostatic discharge voltage PESDxS1UL series [1] Product data sheet MIL-STD-883 (human body model) Device stressed with ten non-repetitive ESD pulses. Table 7. PESDXS1UL_SER IEC 61000-4-2 (contact discharge) [1] ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3B (human body model) > 8 kV All information provided in this document is subject to legal disclaimers. Rev. 3 — 25 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 PESDxS1UL series NXP Semiconductors Unidirectional ESD protection diodes 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 s pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VRWM reverse standoff voltage PESD3V3S1UL IRM VBR Product data sheet Typ Max Unit - - 3.3 V PESD5V0S1UL - - 5.0 V PESD12VS1UL - - 12 V PESD15VS1UL - - 15 V PESD24VS1UL - - 24 V reverse leakage current PESD3V3S1UL VRWM = 3.3 V - 0.7 2 A PESD5V0S1UL VRWM = 5.0 V - 0.1 1 A PESD12VS1UL VRWM = 12 V -