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PESD3V3L5UK,132

PESD3V3L5UK,132

  • 厂商:

    NEXPERIA(安世)

  • 封装:

    SOT891

  • 描述:

    ESD VRWM=3.3 V VBR(Min)=5.3 V VC=9.5 V IPP=3.2 A Ppp=28 W SOT891

  • 数据手册
  • 价格&库存
PESD3V3L5UK,132 数据手册
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESD3V3L5UK; PESD5V0L5UK Low capacitance unidirectional fivefold ESD protection diode arrays Rev. 1 — 25 August 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package designed to protect up to five unidirectional signal lines from the damage caused by ESD and other transients. 1.2 Features and benefits „ „ „ „ „ ESD protection of up to five lines Low diode capacitance Max. peak pulse power: PPP = 30 W Low clamping voltage: VCL = 9.5 V AEC-Q101 qualified „ „ „ „ Very low leakage current: IRM = 0.5 μA ESD protection up to 20 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 3.2 A 1.3 Applications „ Computers and peripherals „ Audio and video equipment „ Cellular handsets and accessories „ Communication systems „ Portable electronics „ Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD3V3L5UK - - 3.3 V PESD5V0L5UK - - 5.0 V PESD3V3L5UK - 20 24 pF PESD5V0L5UK - 18.5 22 pF Per diode VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays 2. Pinning information Table 2. Pinning Pin Description 1 cathode (diode 1) 2 common anode 3 4 5 cathode (diode 4) 6 cathode (diode 5) Simplified outline 1 2 Graphic symbol 3 1 6 cathode (diode 2) 2 5 cathode (diode 3) 3 4 006aaa159 6 5 4 bottom view 3. Ordering information Table 3. Ordering information Type number PESD3V3L5UK Package Name Description Version - plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1 × 0.5 mm SOT891 PESD5V0L5UK 4. Marking Table 4. Marking codes Type number Marking code PESD3V3L5UK P4 PESD5V0L5UK P5 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power tp = 8/20 μs Min Max Unit - 28 W - 30 W Per diode PPP [1][2] PESD3V3L5UK PESD5V0L5UK IPP peak pulse current tp = 8/20 μs [1][2] - - PESD3V3L5UK - 3.2 A PESD5V0L5UK - 3.1 A PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4, 5 or 6 to pin 2. Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Max Unit electrostatic discharge voltage IEC 61000-4-2 (contact discharge) PESD3V3L5UK - 15 kV PESD5V0L5UK - 20 kV - 400 V - 8 kV Per diode VESD PESD3V3L5UK PESD5V0L5UK machine model PESD3V3L5UK PESD5V0L5UK MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4, 5 or 6 to pin 2. Table 7. [1][2] [2] ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 8/20 μs pulse waveform according to IEC 61000-4-5 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD3V3L5UK - - 3.3 V PESD5V0L5UK - - 5.0 V Per diode VRWM IRM VBR reverse standoff voltage reverse leakage current PESD3V3L5UK VRWM = 3.3 V - 0.4 2 μA PESD5V0L5UK VRWM = 5.0 V - 0.08 0.5 μA 5.3 5.6 5.9 V 6.47 6.8 7.14 V - 20 24 pF - 18.5 22 pF breakdown voltage IR = 1 mA PESD3V3L5UK PESD5V0L5UK Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3L5UK PESD5V0L5UK VCL rdif [1][2] clamping voltage PESD3V3L5UK IPP = 3.1 A - - 9.5 V PESD5V0L5UK IPP = 3 A - - 9.9 V differential resistance IR = 5 mA PESD3V3L5UK - 5 16 Ω PESD5V0L5UK - 2.5 8 Ω [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4, 5 or 6 to pin 2. PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays 006aac374 102 001aaa633 1.2 PPP PPP(25°C) PPP (W) 0.8 10 0.4 1 1 102 10 103 0 104 0 50 100 150 200 Tj (°C) tp (μs) Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. 006aac375 25.0 Relative variation of peak pulse power as a function of junction temperature; typical values 006aac376 10 Cd (pF) IRM 20.0 IRM(25°C) (2) 15.0 (1) (1) 1 10.0 (1) (2) (2) 5.0 0.0 0.0 2.0 4.0 6.0 VR (V) 10−1 −75 −25 0 25 50 75 Tj (°C) f = 1 MHz; Tamb = 25 °C (1) PESD3V3L5UK (1) PESD3V3L5UK (2) PESD5V0L5UK (2) PESD5V0L5UK Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse current as a function of junction temperature; typical values PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK Low capacitance unidirectional fivefold ESD protection diode arrays I −VCL −VBR −VRWM V −IRM −IR − + P-N −IPP 006aaa407 Fig 7. V-I characteristics for a unidirectional ESD protection diode PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ DUT (DEVICE UNDER TEST) IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 40 V/div horizontal scale = 50 ns/div vertical scale = 2 kV/div horizontal scale = 15 ns/div PESD3V3L5UK GND PESD5V0L5UK GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical scale = 10 V/div horizontal scale = 50 ns/div vertical scale = 2 kV/div horizontal scale = 15 ns/div GND GND unclamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 8. clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) 006aac377 ESD clamping test setup and waveforms PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays 7. Application information The PESD3V3L5UK and the PESD5V0L5UK are designed for the protection of up to five unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESD3V3L5UK provides a surge capability of 28 W per line and the PESD5V0L5UK provides a surge capability of 30 W per line for an 8/20 μs waveform. data lines PESDxL5UK PESDxL5UK 1 6 1 6 2 5 2 5 3 4 3 4 unidirectional protection of 5 lines Fig 9. bidirectional protection of 4 lines 006aac378 Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays 9. Package outline 1.05 0.95 0.5 max 0.04 max 0.55 3 4 2 5 1 6 0.35 1.05 0.95 0.20 0.12 0.35 0.40 0.32 0.35 0.27 Dimensions in mm 07-05-15 Fig 10. Package outline SOT891 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 5000 PESD3V3L5UK SOT891 4 mm pitch, 8 mm tape and reel; T4 [2] -132 PESD5V0L5UK [1] For further information and the availability of packing methods, see Section 14. [2] T4: 90° rotated reverse taping PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays 11. Soldering 1.05 0.5 (6×) 1.4 0.6 (6×) solder resist solder land plus solder paste 0.7 occupied area Dimensions in mm 0.15 (6×) 0.25 (6×) 0.35 sot891_fr Reflow soldering is the only recommended soldering method. Fig 11. Reflow soldering footprint SOT891 PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK Low capacitance unidirectional fivefold ESD protection diode arrays 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD3V3L5UK_ PESD5V0L5UK v.1 20100825 Product data sheet - - PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 PESD3V3L5UK; PESD3V3L5UK NXP Semiconductors Low capacitance unidirectional fivefold ESD protection diode arrays 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 13 of 15 NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK Low capacitance unidirectional fivefold ESD protection diode arrays Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PESD3V3L5UK_PESD5V0L5UK All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK Low capacitance unidirectional fivefold ESD protection diode arrays 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 August 2010 Document identifier: PESD3V3L5UK_PESD5V0L5UK
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