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MBRF10100CT

MBRF10100CT

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    ITO220AB

  • 描述:

    肖特基二极管 VR=100V IF=10A VF=0.85V IR=1000uA

  • 数据手册
  • 价格&库存
MBRF10100CT 数据手册
MBRF1020CT THRU MBRF10100CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts FEATURES ITO-220AB 4.5± 0.2 10.2± 0.2 High surge capacity. For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. Metal silicon junction,majority carrier conduction. High current capability,low forward voltage drop. Guard ring for over voltage protection. 4.0± 0.3 φ 3 .2± 0.2 φ 3 .3± 0.1 16.5± 0.3 PIN 2 3 8.2± 0.2 3.1+0.2 -0.1 15.0± 0.5 13.5± 0.5 1 Forward Current -10.0 Amperes 2.6± 0.2 MECHANICAL DATA 1.4± 0.1 0.6± 0.1 Case: ITO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Weight:0.060 ounce, 1.67 grams 0.6± 0.1 2.6± 0.15 PIN 1 PIN 2 PIN 3 CASE Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range MBRF MBRF MBRF MBRF SYMBOLS MBRF MBRF MBRF MBRF MBRF MBRF 1070CT 1080CT 1090CT 10100CT 1020CT 1030CT 1040CT 1045CT 1050CT 1060CT VRRM VRMS VDC 20 14 20 30 21 30 45 32 45 50 35 50 60 42 60 70 49 70 80 56 80 90 63 90 100 70 100 VOLTS VOLTS VOLTS I(AV) 10.0 Amps IFSM 150.0 Amps VF 0.55 IR CJ RθJC TJ TSTG 0.75 0.85 1.0 15.0 50.0 450 550 2.0 -50 to +125 Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to case 40 28 40 UNITS -50 to +150 -50 to +150 Volts mA pF C/W C C FIG. 1- FORWARD CURRENT DERATING CURVE 10 8 6 Single Phase Half Wave 60Hz Resistive or inductive Load 4 MBRF1020CT-MBRF1045CT 2 MBRF1050CT-MBRF10100CT 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES MBRF1020CT THRU MBRF10100CT FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 125 100 75 50 175 25 1 10 AMBIENT TEMPERATURE, C INSTANTANEOUS FORWARD CURRENT,AMPERES 50 10 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 0.1 MBRF1020CT-MBRF1045CT MBRF1050CT-MBRF1060CT MBRF1070CT-MBRF10100CT 0.01 0.2 0.4 0.6 0.8 1.0 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1 1.1 100 10 TJ=100 C 1 TJ=75 C 0.1 0.01 20 40 60 80 TJ=25 C 100 MBRF1020CT-MBRF1045CT MBRF1050CT-MBRF10100CT TRANSIENT THERMAL IMPEDANCE, C/W 2000 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 10 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF TJ=25 C 0.001 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 1000 100 NUMBER OF CYCLES AT 60 Hz 100 t,PULSE DURATION,sec. The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)! 100
MBRF10100CT 价格&库存

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MBRF10100CT
  •  国内价格
  • 1+1.04400
  • 30+1.00800
  • 100+0.97200
  • 500+0.90000
  • 1000+0.86400
  • 2000+0.84240

库存:150