VB5222

VB5222 www.VBsemi.com N- and P-Channel 2 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 5.5 0.036 at VGS = 4.5 V 4.2 0.069 at VGS = - 10 V - 3.4 0.083 at VGS = - 4.5 V - 2.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC S2 D1 TSOP-6 Top View 3 mm G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Parameter N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 20 ± 20 5.5 - 3.4 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range ID 4.0 - 2.3 IDM 15 10 IS 1.05 A W 0.73 TJ, Tstg V - 1.05 1.15 PD Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead Symbol t≤5s Steady State Steady State RthJA RthJL Typical Maximum 93 110 130 150 75 90 Unit °C/W Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. 1 VB5222 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) N-Ch 0.6 P-Ch - 0.7 VDS = 0 V, VGS = ± 20 V IGSS IDSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA V N-Ch ± 100 P-Ch ± 100 VDS = 24 V, VGS = 0 V N-Ch 1 VDS = - 24 V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 24 V, VGS = 0 V, TJ = 55 °C P-Ch VDS = 5 V, VGS = 10 V N-Ch VDS = - 5 V, VGS = - 10 V P-Ch ID(on) RDS(on) gfs VSD nA µA -5 3.7 A -3 VGS = 10 V, ID = 2.5 A N-Ch 0.022 0.024 VGS = - 10 V, ID = - 1.8 A P-Ch 0.055 0.069 VGS = 4.5 V, ID = 2.0 A N-Ch 0.030 0.036 VGS = - 4.5 V, ID = - 1.2 A P-Ch 0.079 0.083 VDS = 10 V, ID = 2.5 A N-Ch 4.3 VDS = - 15 V, ID = - 1.8 A P-Ch 2.4 IS = 1.05 A, VGS = 0 V N-Ch 0.81 1.10 IS = - 1.05 A, VGS = 0 V P-Ch - 0.83 - 1.10 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time N-Channel VDS = 15 V, VGS = 5 V, ID = 1.8 A P-Channel VDS = - 15 V, VGS = - 5 V, ID = - 1.8 A td(on) N-Channel VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr N-Ch 2.1 3.2 P-Ch 2.4 3.6 N-Ch 0.7 P-Ch 0.9 N-Ch 0.7 P-Ch 0.8 nC N-Ch 0.5 2.4 P-Ch 3 11 N-Ch 7 P-Ch 8 12 N-Ch 9 14 18 11 P-Ch 12 N-Ch 13 20 P-Ch 12 18 N-Ch 5 8 P-Ch 7 11 IF = 1.05 A, dI/dt = 100 A/µs N-Ch 35 60 IF = - 1.05 A, dI/dt = 100 A/µs P-Ch 30 60 P-Channel VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VB5222 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 10 TC = - 55 °C VGS = 10 V thru 5 V 3 4V 2 1 4 2 0 0 0 1 2 3 4 1 0 5 2 3 4 5 6 25 30 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 0.05 250 0.04 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 125 °C 6 3V 2V 0.03 VGS = 10 V 0.02 0.01 Ciss 200 150 100 Coss 50 Crss 0 0.00 0 1 2 3 4 5 6 5 0 7 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 1.6 VDS = 15 V ID = 1.8 A 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 25 °C 8 I D - Drain Current (A) I D - Drain Current (A) 4 6 4 VGS = 10 V ID = 2.5 A 1.4 1.2 1.0 0.8 2 0.6 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge 4 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 VB5222 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2 A TJ = 150 °C 1 TJ = 25 °C 0.08 ID = 2.5 A 0.06 0.04 0.02 0.00 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 8 ID = 250 µA 0.2 0.0 Power (W) V GS(th) Variance (V) 6 - 0.2 4 - 0.4 2 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (°C) 10 1 Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 100 600 30 VB5222 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 8 VGS = 10 V thru 7 V 6V TC = - 55 °C 5 I D - Drain Current (A) I D - Drain Current (A) 6 5V 4 3 4V 125 °C 4 2 1 2V 3V 0 0 1 0 2 3 4 5 1 0 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.2 6 300 0.1 240 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 25 °C 0.09 VGS = 4.5 V 0.08 VGS = 10 V 0.07 Ciss 180 120 Coss 60 0.06 Crss 0.0 0 0 1 2 3 4 5 6 7 0 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 5 VB5222 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 VDS = 15 V ID = 1.8 A VGS = 10 V ID = 1.8 A 1.6 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 10 6 4 1.4 1.2 1.0 0.8 2 0.6 0.4 - 50 0 0 1 2 3 4 5 - 25 0 5 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.2 10 ID = 1.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.1 TJ = 150 °C 1 TJ = 25 °C ID = 1 A 0.09 0.08 0.07 0.06 0.0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.6 8 0.4 6 0.2 Power (W) V GS(th) Variance (V) 2 ID = 250 µA 0.0 4 2 - 0.2 - 0.4 - 50 0 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage 6 100 125 150 0.01 1 0.1 10 Time (s) Single Pulse Power (Junction-to-Ambient) 30 VB5222 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 7 VB5222 www.VBsemi.com TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 8 INCHES 7 Nom VB5222 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) 9 VB5222 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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