VBA2107

VBA2107 www.VBsemi.com VBA2107 Datasheet P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0050 at VGS = - 4.5 V - 16 - 12 0.0065 at VGS = - 2.5 V - 15 0.0100 at VGS = - 1.8 V - 13 • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • Battery Switch S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Parameter 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 16 - 10 -8 - 50 - 2.7 - 1.36 3.0 1.5 1.9 0.95 TJ, Tstg Operating Junction and Storage Temperature Range V - 11.5 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 33 42 70 84 16 21 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. 服务热线：400-655-8788 1 VBA2107 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.5 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 600 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltagea - 1.0 V ± 100 nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 70 °C - 10 VDS = - 5 V, VGS = - 4.5 V - 30 A VGS = - 4.5 V, ID = - 14 A 0.0050 VGS = - 2.5 V, ID = - 13 A 0.0065 VGS = - 1.8 V, ID = - 12 A 0.0100 gfs VDS = - 6 V, ID = - 14 A 80 VSD IS = - 2.7 A, VGS = 0 V - 0.6 - 1.1 110 165 RDS(on) µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDS = - 6 V, VGS = - 5 V, ID = - 14 A 27.5 VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time 110 170 235 350 410 620 430 tf 285 Gate Resistance Rg 3.6 Source-Drain Reverse Recovery Time trr Fall Time nC 15 IF = - 2.1 A, dI/dt = 100 A/µs ns Ω 270 180 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 50 50 VGS = 5 thru 2 V 40 30 I D - Drain Current (A) I D - Drain Current (A) 40 1.5 V 20 10 30 20 TC = 125 °C 10 25 °C - 5 5 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics 5 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 服务热线：400-655-8788 2 VBA2107 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 12000 Ciss 10000 0.012 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.015 VGS = 1.8 V 0.009 VGS = 2.5 V 0.006 8000 6000 Coss 4000 VGS = 4.5 V 0.003 Crss 2000 0.000 0 0 16 8 24 32 40 0 2 4 ID - Drain Current (A) 12 Capacitance 1.6 6 VGS = 4.5 V ID = 14 A VDS = 6 V ID = 14 A 5 1.4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 4 3 2 1 0 26 52 78 104 130 1.0 0.8 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.030 30 R DS(on) - On-Resistance (Ω) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 1.2 0.6 - 50 0 I S - Source Current (A) 8 6 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.2 0.024 ID = 14 A 0.018 0.012 0.006 0.000 0.0 1.6 3.2 4.8 6.4 8.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 服务热线：400-655-8788 3 VBA2107 www.VBsemi.com 0.6 100 0.4 80 ID = 600 µA 60 Power (W) V GS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.2 0.0 40 20 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 1 ms ID - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC TC = 25 °C Single Pulse 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 4 VBA2107 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 5 VBA2107 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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