VBA2216

VBA2216 www.VBsemi.com P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.015 at VGS = - 4.5 V - 13 0.026 at VGS = - 2.5 V - 10 0.065 at VGS = - 1.8 V -8 a 20 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Switch - Charger Switch S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range Unit V a - 13 - 10a - 8b, c - 7.1b, c - 50 ID IDM Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) Limit - 20 ± 12 - 6a - 2.9b, c 19 12 IS PD TJ, Tstg d, e 3.5b, c 2.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, e Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 28 5.3 Maximum 36 6.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 80 °C/W. 1 VBA2216 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) RDS(on) gfs ID = - 250 µA VDS = VGS, ID = - 250 µA V - 12 mV/°C 3 - 0.5 - 1.2 VDS = 0 V, VGS = ± 12 V ± 20 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 20 V µA A VGS = - 4.5 V, ID = - 5.6 A 0.015 0.018 VGS = - 2.5 V, ID = - 5.3 A 0.021 0.026 VGS = - 1.8 V, ID = - 2.5 A 0.040 0.065 VDS = - 10 V, ID = - 5.6 A 35 VDS = - 10 V, VGS = - 8 V, ID = - 5 A 50 75 20 30 Ω S Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A td(off) tf f = 1 MHz VDD = - 10 V, RL = 1 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω td(on) tr td(off) tf nC 8.4 td(on) tr 3.3 VDD = - 10 V, RL = 1 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 0.2 1 2 0.71 1.1 1.7 2.6 6 9 3.2 5 0.3 0.45 0.6 0.9 10 15 3.5 5.5 kΩ us Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb -6 TC = 25 °C - 50 IS = - 5 A, VGS = 0 V IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.85 - 1.2 V 30 60 ns 20 40 nC 13 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBA2216 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10-2 1.0 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 0.8 0.6 0.4 TJ = 25 °C 10-4 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 0.2 10-8 10-9 0.0 0 3 6 12 9 15 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10 50 VGS = 5 V thru 3 V VGS = 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 VGS = 2 V 20 6 4 TC = 25 °C 2 10 TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 TC = - 55 °C 0.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 10 0.08 VGS - Gate-to-Source Voltage (V) 0.07 R DS(on) - On-Resistance (Ω) 1.5 1.0 VGS = 1.8 V 0.06 0.05 0.04 VGS = 2.5 V 0.03 0.02 0.01 ID = - 6 A 8 VDS = 10 V 6 VDS = 16 V VDS = 5 V 4 2 VGS = 4.5 V 0 0.00 0 10 20 30 40 ID - Drain Current (A) On-Resistance vs. Drain Current 50 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge 3 VBA2216 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 100 ID = - 5 . 6 A (Normalized) R DS(on) - On-Resistance I S - Source Current (A) VGS = 4.5 V 1.4 1.2 VGS = 2.5 V 1.0 10 TJ = 150 °C TJ = 25 °C 1 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 0.2 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.8 1.0 1.2 1.1 1.0 0.05 ID = - 5 . 6 A ; T J = 125 °C 0.9 ID = -2.5 A; TJ = 125 °C 0.04 VGS(th) (V) R DS(on) - On-Resistance (Ω) 0.6 Soure-Drain Diode Forward Voltage 0.06 0.03 0.4 VSD - Source-to-Drain Voltage (V) ID = -2.5 A; TJ = 25 °C 0.8 ID = 250 µA 0.7 ID = -5.6 A; TJ = 25 °C 0.02 0.6 0.01 0.5 0.4 - 50 0.00 0 1 2 3 4 5 - 25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 100 30 Limited by RDS(on)* I D - Drain Current (A) 25 Power (W) 20 15 10 100 µs 10 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 5 TA = 25 °C Single Pulse DC BVDSS Limited 0 0.001 0.01 0.1 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient 4 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient VBA2216 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 20 Power Dissipation (W) I D - Drain Current (A) 25 20 15 Package Limited 10 15 10 5 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 VBA2216 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 10-1 VBA2216 www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 7 VBA2216 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) 8 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) VBA2216 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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