VBA3316

VBA3316 www.VBsemi.com Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.016 at V GS = 10 V 8.5 0.020 at VGS = 4.5 V 7.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.1 APPLICATIONS • Notebook System Power • Low Current DC/DC D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 30 ± 20 8.5 7.5 ID Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range A 1.8b, c 30 10 5 3.1 2.0 ISM IAS EAS L = 0.1 mH V 7.2b, c 5.9b, c 30 2.8 IDM TC = 25 °C TA = 25 °C Unit PD W 2.0b, c 1.25b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t  10 s Steady-State Symbol RthJA RthJF Typ. Max. Unit 52 30 62.5 40 °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. 1 VBA3316 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 30 Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA VDS/TJ ID = 250 µA 3.0 VGS(th)/TJ ID = 250 µA - 5.2 Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th) VDS = VGS, ID= 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On -State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs V 1.2 mV/°C 2.5 V 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS = 5 V, VGS = 10 V 20 µA A VGS = 10 V, ID = 8 A 0.016 VGS = 4.5 V, ID = 5 A 0.020 VDS = 15 V, ID = 8 A 27 VDS = 15 V, VGS = 0 V, ID = 1 MHz 140 VDS = 15 V, VGS = 10 V, ID = 8 A 14.5 22 7.1 11  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 660 86 VDS = 15 V, VGS = 4.5 V, ID = 8 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 5.2 14 28 45 80 35 12 24 td(on) 7 14 10 20 VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  tf Fall Time 2.6 tf td(off) Turn-Off Delay Time VDD = 15 V, RL = 3  ID  5 A, VGEN = 4.5 V, Rg = 1  0.5 18 tr Rise Time 1.9 nC 2.7 f = 1 MHz td(on) Turn-On Delay Time pF 15 30 7 14  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 2.8 ISM VSD 30 IS = 2 A A 0.77 1.1 Body Diode Reverse Recovery Time trr 17 34 ns Body Diode Reverse Recovery Charge Qrr 9 18 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 10 7 V nS Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBA3316 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 40 VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 32 24 VGS = 3 V 16 6 4 TC = 25 °C 2 8 TC = 125 °C 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 0 2.5 1 0.030 1000 0.026 800 5 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 4 Transfer Characteristics Output Characteristics 0.022 VGS = 4.5 V 0.018 600 400 Coss 200 VGS = 10 V Crss 0 0.010 0 10 20 30 40 0 50 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.8 10 ID = 8 A ID = 8 A 1.6 8 VDS = 10 V 6 VDS = 20 V VDS = 15 V 4 2 0 0.0 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.014 2 1.2 VGS = 4.5 V 1.0 0.8 3.2 6.4 9.6 12.8 16 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 3 VBA3316 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 100 ID = 8 A I S - Source Current (A) R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.01 0.08 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.5 50 0.2 40 Power (W) - 0.1 ID = 5 mA - 0.4 30 20 ID = 250 µA - 0.7 - 1.0 - 50 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 1 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 I D - Drain Current (A) 0.1 Time (s) TJ - Temperature (°C) Threshold Voltage 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 1s 10 s DC 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage VGS(th) Variance (V) 1 100 10 VBA3316 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 I D - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 VBA3316 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 VBA3316 www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 7 VBA3316 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) VBA3316 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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