VBA5638

VBA5638 www.VBsemi.com N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested ID (A)a Qg (Typ.) RDS(on) (Ω) 0.028 at VGS = 10 V 5.3 0.031 at VGS = 4.5 V 4.7 0.050 at VGS = - 10 V - 4.9 0.060 at VGS = - 4.5 V - 4.5 6 nC APPLICATIONS 8 nC • CCFL Inverter D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 60 - 60 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C 5.3 - 4.9 4.3 - 4.2 4.3b, c - 4.0b, c 3.4b, c 20 - 3.4b, c - 25 2.6 - 2.8 1.7b, c 20 - 1.7b, c - 25 IAS 11 15 EAS 6.1 11 3.1 3.4 ID TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source Drain Current Diode Current TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy IS ISM Pulsed Source-Drain Current Single Pulse Avalanche Current L = 0.1 mH TC = 25 °C Maximum Power Dissipation V ± 20 TC = 70 °C TA = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C 2 2.2 2b, c 1.3b, c 1.3b, c TJ, Tstg Operating Junction and Storage Temperature Range A mJ 2b, c PD Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter P-Channel Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 55 62.5 53 62.5 Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40 30 37 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel. 1 VBA5638 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA N-Ch 60 VGS = 0 V, ID = - 250 µA P-Ch - 60 ID = 250 µA N-Ch 55 ID = - 250 µA P-Ch - 50 ID = 250 µA N-Ch -6 4 On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) RDS(on) gfs mV ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1 3 VDS = VGS, ID = - 250 µA P-Ch -1 -3 VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current V N-Ch 100 P-Ch - 100 N-Ch 1 VDS = - 60 V, VGS = 0 V P-Ch -1 VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 60 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS ≥ 5 V, VGS = 10 V N-Ch 20 VDS ≤ - 5 V, VGS = - 10 V P-Ch - 25 VGS = 10 V, ID = 4.3 A N-Ch 0.026 0.028 VGS = - 10 V, ID = - 3.1 A P-Ch 0.055 0.060 VGS = 4.5 V, ID = 3.9 A N-Ch 0.029 0.035 VGS = - 4.5 V, ID = - 0.2 A P-Ch 0.060 0.070 VDS = 15 V, ID = 4.3 A N-Ch 15 VDS = - 15 V, ID = - 3.1 A P-Ch 8.5 V nA µA A Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 4.3 A Total Gate Charge Gate-Source Charge 2 Qg VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A N-Ch 665 P-Ch 650 N-Ch 75 P-Ch 95 N-Ch 40 P-Ch 60 N-Ch 13 20 22 P-Ch 14.5 N-Ch 6 9 12 N-Channel VDS = 30 V, VGS = 4.5 V, ID = 4.3 A P-Ch 8 N-Ch 2.3 P-Ch 2.2 N-Ch 2.6 P-Ch 3.7 Qgs Gate-Drain Charge Qgd P-Channel VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A Gate Resistance Rg f = 1 MHz pF N-Ch 2 3 P-Ch 14 20 nC Ω VBA5638 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time P-Channel VDD = - 30 V, RL = 12.5 Ω ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω N-Channel VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω tf P-Channel VDD = - 30 V, RL = 12.5 Ω ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time N-Channel VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω N-Ch 15 25 P-Ch 30 45 N-Ch 65 100 P-Ch 70 105 N-Ch 15 25 P-Ch 40 60 N-Ch 10 15 P-Ch 30 45 N-Ch 10 15 15 P-Ch 10 N-Ch 15 25 P-Ch 13 20 N-Ch 20 30 P-Ch 35 55 N-Ch 10 15 P-Ch 30 45 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD N-Ch 2.6 P-Ch - 2.8 N-Ch 20 P-Ch A - 25 IS = 1.7 A N-Ch 0.8 1.2 IS = - 2 A P-Ch - 0.8 - 1.2 N-Ch 30 60 P-Ch 30 50 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 32 50 P-Ch 35 60 Reverse Recovery Fall Time ta P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 25 P-Ch 16 Reverse Recovery Rise Time tb N-Ch 5 P-Ch 14 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3 VBA5638 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 18 14 12 10 8 6 4 4 3 2 TC = 125 °C 1 25 °C 3V 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 55 °C 0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 3.5 1000 0.060 800 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0.055 0.050 0.045 0.040 VGS = 4.5 V 0.035 VGS = 10 V 0.030 Ciss 600 400 200 Coss 0.025 0 2 4 6 8 10 12 14 16 18 0 20 30 40 50 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 60 2.0 VDS = 30 V ID = 4.3 A 1.8 8 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 20 10 ID - Drain Current (A) 10 6 4 VGS = 10 V ID = 4.3 A 1.6 1.4 1.2 1.0 2 0.8 0 0 4 Crss 0 0.020 3 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 VBA5638 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted R DS(on) - Drain-to-Source On-Resistance (mΩ) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 1.0 0.8 1.2 0.12 0.11 0.10 0.09 0.08 0.07 ID = 4.3 A 0.06 0.05 0.04 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 25 2.8 Power (W) 2.4 2.2 2.0 15 10 1.8 5 1.6 1.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* 10 100 µs I D - Drain Current (A) VGS(th) (V) 20 ID = 250 µA 2.6 1 ms 1 10 ms 0.1 TA = 25 °C Single Pulse 0.01 100 ms 1s 10 s DC 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 5 VBA5638 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 6 3.5 5 Power Dissipation (W) ID - Drain Current (A) 3.0 4 3 2 2.5 2.0 1.5 1.0 1 0.5 0.0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating Current Derating* IC - Peak Avalanche Current (A) 100 10 TA = 1 0.000001 L . ID BV - VDD 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 VBA5638 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case 7 VBA5638 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 thru 5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 4V 10 15 10 TC = 125 °C 5 5 3V 25 °C - 55 °C 0 0 1 2 3 4 5 6 7 0 1.0 8 1.5 2.0 3.5 4.0 50 60 3.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.11 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.10 0.09 0.08 0.07 VGS = 4.5 V VGS = 10 V 0.06 800 Ciss 600 400 0.05 200 Coss 0.04 0.03 Crss 0 0 10 5 15 20 25 0 10 20 ID - Drain Current (A) 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.2 10 VDS = 30 V ID = 3.1 A 2.0 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 30 6 4 VGS = 10 V ID = 3.1 A 1.8 1.6 1.4 1.2 1.0 2 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge 8 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature VBA5638 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 20 0.35 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.0 0.30 0.25 ID = 3.1 A 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 10 8 On-Resistance vs. Gate-to-Source Voltage 0.6 50 0.4 40 Power (W) ID = 250 µA 0.2 0.0 - 0.2 30 20 10 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 IDM Limited Limited by R DS(on)* 10 I D - Drain Current (A) V GS(th) Variance (V) Source-Drain Diode Forward Voltage - 0.4 - 50 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited 0.1 P(t) = 0.01 P(t) = 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited P(t) = 1 P(t) = 10 DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 9 VBA5638 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.5 ID - Drain Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 75 50 100 125 150 TC - Case Temperature (°C) Current Derating* 4.5 100 IC - Peak Avalanche Current (A) 4.0 Power Dissipation (W) 3.5 3.0 2.5 2.0 1.5 1.0 10 TA = L . ID BV - VDD 0.5 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 1 0.000001 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 10 VBA5638 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 11 VBA5638 www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 12 INCHES DIM e 0.101 mm VBA5638 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) 13 VBA5638 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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