VBE1104N

VBE1104N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 40 0.035 at VGS = 4.5 V 37 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TA = 25 °Cc Operating Junction and Storage Temperature Range ID Unit V 40 23 IDM 120 IAR 35 EAR 61 A mJ b PD 107 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. 1 VBE1104N www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VSS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 100 ,VVGS = 0 V 1 VDS= 100 V, VGS = 0 V, TJ = 125 °C 50 VDS= 100 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) Drain-Source On-State Resistancea 3 rDS(on) 75 0.030 0.034 VGS = 4.5 V, ID = 3 A 0.032 0.038 VGS = 10 V, ID = 5 A, TJ = 125 °C Forward Transconductance gfs VDS = 15 V, ID = 15 A nA µA A VGS = 10 V, ID = 5 A 0.060 VGS = 10 V, ID = 3 A, TJ = 175 °C a V Ω 0.075 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 35 c 2400 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 40 A Gate-Source Charge Qgs Gate-Drain Chargec Qgd 9 RG 1.7 Gate Resistance Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec td(on) tr td(off) VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω tf pF 270 60 nC 11 Ω 11 20 12 20 30 45 12 20 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 40 Pulsed Current ISM 120 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 30 A, di/dt = 100 A/µs A 1.0 1.5 V 60 100 ns 5 8 A 0.15 0.4 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBE1104N www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 75 75 VGS = 10 thru 6 V 60 45 ID - Drain Current (A) I D - Drain Current (A) 60 6V 30 45 30 TC = 125 °C 15 15 25 °C 2V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 0.10 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 80 25 °C 60 125 °C 40 0.08 0.06 VGS = 4.5V 0.04 20 VGS = 10 V 0.02 0 0 15 30 45 60 0 75 15 30 60 75 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 3000 20 VGS - Gate-to-Source Voltage (V) Ciss 2400 C - Capacitance (pF) 45 1800 1200 600 Crss VDS = 50 V ID =10 A 16 12 8 4 Coss 0 0 0 20 40 60 80 100 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 60 70 3 VBE1104N www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 100 VGS = 10 V ID = 15 A I S - Source Current (A) (Normalized) r DS(on) - On-Resistance 2.0 1.5 0.8 TJ = 150 °C 10 TJ = 25 °C 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Drain-Source Breakdown Voltage (V) 130 100 I Dav (A) 0.6 On-Resistance vs. Junction Temperature 1000 10 IAV (A) at TA = 25 °C 1 IAV (A) at TA = 150 °C 0.1 0.00001 4 0.3 0.0001 0.001 0.01 0.1 1 ID = 10 mA 125 120 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain-Source Breakdown Voltage vs. Junction Temperature 175 VBE1104N www.VBsemi.com THERMAL RATINGS 1000 50 100 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 0 0 25 50 75 100 125 150 Limited by rDS(on)* 10 µs 10 100 µs 1 ms 10 ms 1 0.1 0.1 175 TC - Ambient Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature DC, 100 ms TC = 25 °C Single Pulse 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 VBE1104N www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 6 INCHES DIM. VBE1104N www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 7 VBE1104N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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