VBE1638

VBE1638 www.VBsemi.com N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.025 at VGS = 10 V 35 0.030 at VGS = 4.5 V 30 VDS (V) 60 • TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V 35 ID 28 IDM 100 Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Pulsed Drain Current Single Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C EAS 20 mJ 100 PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range A - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 18 22 40 50 3.2 4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec. 1 VBE1638 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max 2.0 3.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 60 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs V nA µA 250 50 A 0.025 0.031 VGS = 10 V, ID = 15 A, TJ = 125 °C 0.055 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.069 VGS = 4.5 V, ID = 10 A 0.030 VDS = 15 V, ID = 15 A 20 Ω 0.045 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) 670 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 140 60 11 VDS = 30 V, VGS = 10 V, ID = 23 A 17 3 nC 3 VDD = 30 V, RL = 1.3 Ω ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω tf 8 15 15 25 30 45 25 40 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) A Pulsed Current ISM Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 15 A, di/dt = 100 A/µs 30 60 ns 50 Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBE1638 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 50 100 VGS = 10 thru 6 V 5V 40 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 4V 20 30 20 TC = 125 °C 10 25 °C 3V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 32 6 0.10 TC = - 55 °C 0.08 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 25 °C 24 125 °C 16 8 0 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 5 10 15 20 25 0 10 20 30 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 50 10 V GS - Gate-to-Source Voltage (V) 1000 800 C - Capacitance (pF) 0.06 Ciss 600 400 200 Coss Crss 0 0 VDS = 30 V ID = 23 A 8 6 4 2 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance 60 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) Gate Charge 3 VBE1638 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 100 2.5 VGS = 10 V ID = 15 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( °C) On-Resistance vs. Junction Temperature 4 175 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.5 VBE1638 www.VBsemi.com THERMAL RATINGS 100 25 *rDS(on) Limited 10 µs 100 µs I D - Drain Current (A) I D - Drain Current (A) 20 15 10 10 1 ms 10 ms 1 100 ms dc TC = 25 °C Single Pulse 5 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 5 VBE1638 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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