VBI1638
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N-Channel 6 0-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)
ID (A)
0.030 at VGS = 10 V
8.0
0.036 at VGS = 4.5 V
6.5
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
D
D
G
S
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)a
TA = 25 °C
TA = 70 °C
8.0
6.4
IDM
IAS
EAS
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
ID
10 s
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
3.3
2.3
Steady State
60
± 20
7.0
5.6
40
15
11
1.7
1.2
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
36
75
17
Maximum
45
90
20
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
60
VGS(th)
VDS = VGS, ID = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
20
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Diode Forward Voltage
VDS ≥ 5 V, VGS = 10 V
a
Typ.
Max.
Unit
V
3
nA
µA
40
A
VGS = 10 V, ID = 6.0 A
0.030
VGS = 10 V, ID = 6.0 A, TJ = 125 °C
VGS = 10 V, ID = 6.0 A, TJ = 175 °C
0.035
0.040
VGS = 4.5 V, ID = 5.1 A
0.034
Ω
gfs
VDS = 15 V, ID = 6.0 A
25
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
18
27
VDS = 30 V, VGS = 10 V, ID = 6.0 A
3.4
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
VGS = 0.1 V, f = 5 MHz
0.5
td(on)
Turn-On Delay Time
VDD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
5.3
IF = 1.7 A, dI/dt = 100 A/µs
1.4
2.4
10
20
10
20
25
50
12
24
50
80
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 10 V thru 5 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
4V
16
8
24
16
TC = 150 °C
8
25 °C
3V
0
0.0
- 55 °C
0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
3.0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1400
0.07
1200
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.06
0.05
VGS = 4.5 V
0.04
VGS = 10 V
0.03
1000
800
600
400
Coss
0.02
200
0.01
0
0
8
24
16
32
Crss
0
40
10
20
50
60
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
2.2
ID = 6.0 A
ID = 6.0 V
2.0
VGS = 10 V
8
VDS = 30 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
40
30
6
4
1.8
1.6
1.4
1.2
1.0
2
0.8
0
0
4
8
16
12
0.6
- 50
20
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
50
0.06
TJ = 175 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.05
TJ = 25 °C
10
0.04
ID = 6.0 A
0.03
0.02
0.01
1
0.00
0.00
0.5
1.0
1.5
2.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3
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0.8
50
0.4
40
0.0
30
Power (W)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
ID = 250 µA
- 0.4
- 0.8
20
10
- 1.2
- 50
0
- 25
0
25
50
75
100
125
150
175
0.01
0.1
1
TJ - Temperature (°C)
10
100
1000
Time (s)
Single Pulse Power
Threshold Voltage
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 75 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10 -2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
4
1
10
VBI1638
www.VBsemi.com
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Inches
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.62
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
5
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